Logic Gates Based on Carbon Nanotube Field-Effect Transistors with SiN_x Passivation Films

Abstract

We demonstrated logic gates based on complementary carbon nanotube field-effect transistors (CNT-FETs) with SiN x passivation films deposited by catalytic chemical vapor deposition. The carrier type of CNT-FETs was controlled by forming SiN x passivation films. Electrical measurements revealed that the p-type characteristics of CNT-FETs were converted to n-type characteristics after the deposition of SiN x passivation films. Then, the n-type CNT-FETs with SiN x passivation films were reconverted to p-type CNT-FETs by annealing in N 2 atmosphere. As a consequence, complementary voltage inverters comprising p-and n-type CNT-FETs with SiN x passivation films were demonstrated on the same SiO 2 substrate by conventional photolithography and lift-off techniques. Moreover, the static transfer and dynamic characteristics of the CNT-FET-based inverters were investigated. It was found that a gain of approximately 3 was achieved and that the device was switched properly at frequencies of up to 100 Hz. #

Highly Uniform and Stable n-Type Carbon Nanotube Transistors by Using Positively Charged Silicon Nitride Thin Films

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