Logic and memory functions of an inverter comprising reconfigurable double gated feedback field effect transistors

Abstract

In this study, we propose an inverter consisting of reconfigurable double-gated (DG) feedback field-effect transistors (FBFETs) and examine its logic and memory operations through a mixed-mode technology computer-aided design simulation. The DG FBFETs can be reconfigured to n- or p-channel modes, and these modes exhibit an on/off current ratio of ~ 1012 and a subthreshold swing (SS) of ~ 0.4 mV/dec. Our study suggests the solution to the output voltage loss, a common problem in FBFET-based inverters; the proposed inverter exhibits the same output logic voltage as the supply voltage in gigahertz frequencies by applying a reset operation between the logic operations. The inverter retains the output logic ‘1’ and ‘0’ states for ~ 21 s without the supply voltage. The proposed inverter demonstrates the promising potential for logic-in-memory application.

Reconfigurable Logic‐In‐Memory Cell Comprising Triple‐Gated Feedback Field‐Effect Transistors

“…In our previous work, the operating speed of an inverter consisting of FBFETs was enhanced from a voltage pulse of 1 ms to a voltage pulse of 1 ns by applying a reset operation. [ 26 ] By applying the reset pulse prior to the logic operation, the R‐LIM cell can perform the logic operation at a faster speed. Figure S6 (Supporting Information), shows that the TG FBFETs have memory characteristics.…”

“…These devices can be reconfigured in n-channel or p-channel modes; electrostatic doping induced by gate bias enables the reconfiguration. [23][24][25][26][27] We design a reconfigurable LIM (R-LIM) cell with eight triple-gated (TG) FBFETs and examine the memory characteristics and performance of eight Boolean logics (YES, NOT, AND, OR, NAND, NOR, XNOR, and XOR gates). Each TG FBFET has one controlgate (CG) electrode and two program-gate (PG) electrodes that determine the channel mode; the CG electrode is located between the PG electrodes.…”

“…These devices can be reconfigured in n ‐channel or p ‐channel modes; electrostatic doping induced by gate bias enables the reconfiguration. [ 23–27 ]…”

Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors

“…Among the various emerging devices [ 8 , 9 , 10 , 11 , 12 ], feedback field-effect transistors (FBFETs) have attracted attention as suitable devices for IMC implementation, because they perform hybrid switching and memory storage [ 13 , 14 , 15 ]. Moreover, multiple-gate FBFETs provide enhanced flexibility in circuit design owing to their reconfigurable operation between the p - channel and n -channel modes in single devices, which is advantageous for reducing the number of devices required for complex IMC circuit designs [ 16 ]. To extend the application of versatile multiple-gate FBFETs, it is essential to investigate the effect of temperature on the operating characteristics of FBFETs, because temperature is one of the primary factors affecting the reliability of electronic devices.…”

Reconfigurable Feedback Field-Effect Transistors with a Single Gate

“…In particular, due to the thermal limit of carriers, the subthreshold swing has a limit of 60 mV/dec at room temperature [3]. Various devices such as tunneling FET (TFET) [4][5][6][7] that use tunneling effect, impact ionization MOS (I-MOS) [8][9][10][11] that uses impact ionization, and feedback FET (FBFET) [12][13][14][15][16][17][18][19][20][21][22][23][24] that uses feedback phenomena have been studied to overcome these limitations.…”