Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high-field stressing

DiMaria, D. J.; Weinberg, Z. A.; Aitken, J.

doi:10.1063/1.323705

Cited by 165 publications

(26 citation statements)

References 53 publications

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“…[5][6][7] Through electron injection experiments we determined that the capture cross section for the H-induced positive charge is significantly different than that observed for the elimination of charge induced by initial hole injection. The trapped holes have a capture cross section consistent with that expected for a Coulombically attractive center ϳ10 Ϫ13 cm 2 ; 15 whereas, the H-induced positive charge does not trap electrons, at least up to injected fluences of 5ϫ10 16 electrons cm Ϫ2 . This result is consistent with earlier work.…”

supporting

confidence: 53%

Mechanism for anneal-induced interfacial charging in SiO2 thin films on Si

Warren

Vanheusden

Schwank

et al. 1996

Applied Physics Letters

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H-induced positive charging is observed at both the top Si/SiO2 and bottom SiO2/Si interfaces in Si/SiO2/Si structures. The response of the H-induced positive charge to thermal annealing and electron injection is very different from that of simple oxygen vacancy hole traps in SiO2. To explain this H-induced positive charging, we propose a scheme in which H reacts to form positively charged over-coordinated oxygen centers in close proximity to both top and bottom interfaces. The annealing-induced entity may also provide a natural explanation for the origin of the fixed oxide charge that forms during oxidation of Si.

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supporting

confidence: 53%

Mechanism for anneal-induced interfacial charging in SiO2 thin films on Si

Warren

Vanheusden

Schwank

et al. 1996

Applied Physics Letters

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“…2b). Here, the X-ray radiation is absorbed in the gate oxide and creates initially uniform distribution of the hole-electron pairs throughout the insulator 32, 33 . Depending on the direction of the external electric field, a fraction of electrons and holes recombine and rest of them drift either towards the SiO 2 /Si or graphene/SiO 2 (G/SiO 2 in the following) interface.…”

Section: Resultsmentioning

confidence: 99%

X-ray induced electrostatic graphene doping via defect charging in gate dielectric

Procházka

Mareček

Lišková

et al. 2017

Sci Rep

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Graphene field effect transistors are becoming an integral part of advanced devices. Hence, the advanced strategies for both characterization and tuning of graphene properties are required. Here we show that the X-ray irradiation at the zero applied gate voltage causes very strong negative doping of graphene, which is explained by X-ray radiation induced charging of defects in the gate dielectric. The induced charge can be neutralized and compensated if the graphene device is irradiated by X-rays at a negative gate voltage. Here the charge neutrality point shifts back to zero voltage. The observed phenomenon has strong implications for interpretation of X-ray based measurements of graphene devices as it renders them to significantly altered state. Our results also form a basis for remote X-ray tuning of graphene transport properties and X-ray sensors comprising the graphene/oxide interface as an active layer.

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“…An experiment performed by DiMaria et al (1977), however, has shown that the location of the X-ray induced positive charge is so close to the…”

Section: Resultsmentioning

confidence: 99%