Articles you may be interested inSimulation of pattern effect induced by millisecond annealing used in advanced metal-oxide-semiconductor technologies Experimental determination of the frequency factor of thermal annealing processes in metal-oxide-semiconductor gate-oxide structures
In a simulation experiment the rf plasma annealing rate of the positive oxide charge in metal-SiO2-Si structures has been found to be a function of the amplitude and frequency of the ac voltage. In the range studied (0.4–8 V, 10 Hz–10 MHz), the rate increases with both the amplitude and the frequency until saturation is reached near the upper figures. For frequencies above 100 kHz, an enhanced annealing rate (compared with the pure thermal annealing) is observed even at an rf voltage as low as 0.4 V. Similarly, for voltages above 4 V, an enhanced annealing rate is observed at a frequency as low as 100 Hz. A simple theory based on the first-order trapping-recombination kinetics in the context of the recombination enhanced defect reactions model has been developed to explain the experimental results.
The density of radiation-induced interface traps in a post-metal-annealed (PMA) Al-gate metal-oxide-semiconductor (metal/SiO2/Si) depends strongly on the linewidth of the metal gate over a wide range (1–750 μm) of linewidths studied, although there is no discernible dependence prior to the irradiation. The dependence is such that the narrower the linewidth, the fewer the radiation-induced interface traps. Such dependence has been generally observed for both p- and n-type Si samples, for oxides grown in dry O2 or steam at temperatures over a wide range (900–1000 °C), and for PMA treatment either in dry N2 or in forming gas (10% H2+90% N2). The results can be qualitatively explained by a model based on the gate linewidth dependence of the SiO2/Si interfacial stress prior to irradiation, which affects the radiation sensitivity in accordance with the strained bond model.
rf annealing technique has been successfully applied to remove the radiation-induced electron traps in MOS structures. The experimental details, including the annealing apparatus, sample fabrication and irradiation, sample measurements, and data analysis will be described. Some suggestions concerning the possible mechanisms involved in the annealing of neutral traps, in particular, the recombination-enhanced defect reactions, will be presented.
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