Localized two-dimensional electron gas formation by focused Si ion beam implantation into GaAs/AlGaAs heterostructures

Abstract

Articles you may be interested inFormation of GaAs/AlGaAs constricted-channel field-effect transistor structures by focused Ga implantation and transport of electrons via focused ion beam induced localized states

Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped AlxGa1−xAs

“…The first approach has been successfully used to fabricate two-dimensional electron gases ͑2DEG͒ as well as twodimensional hole gases 6,7 ͑2DHG͒ and bipolar twodimensional devices. 8 However, with this approach the low temperature mobilities are limited to approximately 2 ϫ 10 4 cm 2 /V s ͑electrons͒ so this technology is more appropriate for room temperature applications.…”

In‐plane gate transistors implanted with different channel geometries by focussed ion beam in positive mode pattern definition technique

“…The difficulty of this method consists in the fact that both the depth and the lateral distribution of the implanted ions in material are different. Sasa et al 16 fabricated 2DEGs in GaAs/AlGaAs quantum well heterostructures, implanting Si 2+ ions 16. At T = 4.2 K, the measurements proved that the transport properties are dominated by the successful formation of a good quality 2DEG in the quantum well, but proved at the same time also the existence of a second 2DEG at another interface of the heterostructure forming a parallel conducting channel.…”

High rate etching of GaAs and GaP by gas cluster ion beams

“…GCIB may have potential use in etching where etching by conventional ion beams has been found to cause significant damage [2,3]. The cluster consists of several thousands of atoms, so it impacts a surface with equivalent low energy and high density [4].…”