Localized removal of the Au–Si eutectic bonding layer for the selective release of microstructures

Gradin, Henrik; Braun, Stefan; Stemme, G.; Wijngaart, Wouter van der

doi:10.1088/0960-1317/19/10/105014

Cited by 8 publications

(5 citation statements)

References 26 publications

(41 reference statements)

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“…We postulate that the voids can heal above the bulk eutectic temperature (∼360 °C), where the collective motion of Au atoms can possibly backflow into the voids. This is in logical agreement with the fact that eutectic bonding requires an annealing temperature above eutectic and is often accompanied with pressure ,− even if Au–Si intermixing takes place at much lower temperatures. These explanations are somewhat speculative, but we hope that these arguments will stimulate future studies on the interface between Si and a thick Au film with an emphasis on the electrical properties.…”

Section: Results and Discussionsupporting

confidence: 82%

Electrical Contact at the Interface between Silicon and Transfer-Printed Gold Films by Eutectic Joining

Keum

Chung

Kim

2013

ACS Appl. Mater. Interfaces

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This paper presents the electrical and morphological properties at the interface between a metal (Au) and a semiconductor (Si) formed by a novel transfer-printing technology. This work shows that a transfer-printed thin (hundreds of nanometers) Au film forms excellent electrical contact on a Si substrate when appropriate thermal treatment is applied. The successful electrical contact is attributed to eutectic joining, which allows for the right amount of atomic level mass transport between Au and Si. The outcomes suggest that transfer-printing-based micromanufacturing can realize not only strong mechanical bonding but also high-quality electrical contact via eutectic joining.

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Section: Results and Discussionsupporting

confidence: 82%

Electrical Contact at the Interface between Silicon and Transfer-Printed Gold Films by Eutectic Joining

Keum

Chung

Kim

2013

ACS Appl. Mater. Interfaces

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“…In this study, a new process of metallization and wire interconnection was developed based on an electrochemical etching approach [ 17 , 18 ] to pattern the Au film on highly topographic surfaces without masks (see Figure 4 ). More specifically, a Cr/Au film of 30 nm/200 nm was sputtered on the handle layer as well as the exposed device layer of the patterned SOI wafer (see Figure 4 a).…”

Section: Metallization and Wire Interconnectionmentioning

confidence: 99%

A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

Xie

Xing

Wang

et al. 2015

Sensors

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This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months), a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%.

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“…In recent years, bonding technique has been widely used in MEMS, 3D integration and nanotechnology [1][2][3]. Several kinds of bonding techniques which include direct bonding, anodic bonding and intermediate layer bonding have been presented in wafer level .…”

Section: Introductionmentioning

confidence: 99%

Reliability of Au-Si eutectic bonding

Song

et al. 2014

2014 15th International Conference on Electronic Packaging Technology

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Glass (7740) and silicon (100) wafer are bonded using gold as the bonding medium and annealed to enhance the bonding strength at temperature about 450 . The voids in the bonding interface are the main reason to cause the poor reliability of bonding, and scanning electron microscope (SEM) photos reveal that there are a number of voids in the craters on the surface of silicon wafer after bonding. It is observed that the voids appear with the increase of sizes of the local bonded areas (reaction areas); that is to say, the bigger the local bonded areas are, the larger possibility to form the voids in the craters. Considering the analyses above, a new model is proposed to test the relationship between the voids and the local reaction areas, and the SEM pictures suggest that when the sizes of the reaction areas are larger than 5 m, the voids will form in the craters obviously. In other words, the eutectic alloys are insufficient to replenish the cavities generated by the diffusion of silicon when the sizes of the reaction areas are beyond 5 m.

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Localized removal of the Au–Si eutectic bonding layer for the selective release of microstructures

Cited by 8 publications

References 26 publications

Electrical Contact at the Interface between Silicon and Transfer-Printed Gold Films by Eutectic Joining

Electrical Contact at the Interface between Silicon and Transfer-Printed Gold Films by Eutectic Joining

A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

Reliability of Au-Si eutectic bonding

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