Localized exciton luminescence in YVO4:Bi3+

Цюмра, В.; Zhyshkovych, A. V.; Malyi, T.; Chornodolskyy, Ya. M.; Vistovskyy, V.; Syrotyuk, S. V.; Zhydachevskyy, Yaroslav; Suchocki, A.; Voloshinovskii, А.

doi:10.1016/j.optmat.2019.01.071

Cited by 10 publications

(10 citation statements)

References 40 publications

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“…The VIS emission was identified in the literature as the emission corresponding to the 3 P 1,0 → 1 S 0 transitions of a free Bi 3+ ion [3,26,[28][29][30]36,39,40,42,43,124,127,130,[143][144][145][146][147][148][149][150][151][152][153], D-state emission [63,114,115,120,128,154], charge transfer emission [1,10,65,114,115,154], impurity-trapped or impurity-bound exciton emission [12,69,83,120,122,123,128,[154][155][156], MMCT emission [6,7,[63]…”

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

“…Detailed investigations of the VIS emission by the time-resolved spectroscopy methods in a wide temperature range (down to 0.4 K) and determination of the RES parameters carried out in [7,9,13,[16][17][18]21,[72][73][74][75][76][77][78]83,93,95,99,156] allow us to make a justified conclusion on the exciton-like origin of the emission in the considered Bi 3+ -doped compounds. The VIS emission was interpreted as the luminescence of an exciton localized around a Bi 3+ -related center.…”

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

“…However, the origin of these states was not discussed. In [3,26,29,36,39,40,42,43,[143][144][145], the Bi 3+ -related spectral bands of YVO 4 :Bi were ascribed to the electronic transitions between the ground and excited states of a Bi 3+ ion, while in [7,27,33,34,38,41,44,128,141,156,[249][250][251][252][253], to the charge transfer transitions between Bi and V ions. In the latter set of works, the lowest-energy absorption band was connected with the Bi 3+ (6s 2 ) → V 5+ (3d 0 ) transitions and the emission band, with the V 4+ (3d 1 ) → Bi 4+ (6s 1 ) transitions.…”

Section: Appendix Amentioning

confidence: 99%

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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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Bi-doped compounds recently became the subject of an extensive research due to their possible applications as scintillator and phosphor materials. The oxides co-doped with Bi3+ and trivalent rare-earth ions were proposed as prospective phosphors for white light-emitting diodes and quantum cutting down-converting materials applicable for enhancement of silicon solar cells. Luminescence characteristics of different Bi3+-doped materials were found to be strongly different and ascribed to electronic transitions from the excited levels of a Bi3+ ion to its ground state, charge-transfer transitions, Bi3+ dimers or clusters, radiative decay of Bi3+-related localized or trapped excitons, etc. In this review, we compare the characteristics of the Bi3+-related luminescence in various compounds; discuss the possible origin of the corresponding luminescence centers as well as the processes resulting in their luminescence; consider the phenomenological models proposed to describe the excited-state dynamics of the Bi3+-related centers and determine the structure and parameters of their relaxed excited states; address an influence of different interactions (e.g., spin-orbit, electron-phonon, hyperfine) as well as the Bi3+ ion charge and volume compensating defects on the luminescence characteristics. The Bi-related luminescence arising from lower charge states (namely, Bi2+, Bi+, Bi0) is also reviewed.

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Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

Section: On the Origin Of The Visible Luminescencementioning

confidence: 99%

Section: Appendix Amentioning

confidence: 99%

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Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

et al. 2020

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“…Shift of maxima position of this band dependently on method of synthesis can be caused by its complex character. It is well known that excitation bands of vanadate compounds in the 270 -350 nm spectral range are caused by 1 A 1 ¤ 1 T 2 and 1 A 1 1 T 1 transitions in the VO 4 3anions [45][46][47].…”

Section: -mentioning

confidence: 99%

Structure and spectroscopy characterization of La1-xSmxVO4 luminescent nanoparticles synthesized co-precipitation and sol-gel methods

et al. 2019

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The Sm-activated orthvanadate nanoparticles with La 1-x Sm x VO 4 (x ≤ 0.3) composition were synthesized by co-precipitation and sol-gel methods. XRD study has shown that synthesized samples are characterized by monoclinic or tetragonal structure as well as their mixture dependently on Sm concentration and methods of synthesis. Influence of method of synthesis on morphology of nanoparticles, their absorption, diffuse reflectance and emission spectra was observed and studied. Luminescence properties and diffuse reflectance spectra of the sol-gel nanoparticles are also depend on Sm concentrations. At least two types of Sm 3+ centers were found by emission spectra. These centers have different excitation efficiency by light from the 350-450 nm spectral range. Structures of the centers are discussed taking into account crystal structure, possible defects, morphology of the synthesized nanoparticles and their phase compositions.

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“…Different luminescence intensities provide an interesting opportunity to enhance the optical storage potential of the photochromic luminescent materials [50]. Recently, the bismuth ion was extensively used as an active luminescence center [51][52][53][54][55]. In contrast to the rare-earth ions, the bismuth ion has many advantages such as low cost.…”

Section: Introductionmentioning

confidence: 99%

Reversible multiplexing for optical information recording, erasing, and reading-out in photochromic BaMgSiO4:Bi3+ luminescence ceramics

et al. 2020

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Optical data storage technology has many advantages over the traditional solid-state and magnetic storage technology, such as low cost, multi-dimensional storage, and rewritable capability. Therefore, the optical data storage technology has been in increasing demand for optical storage media. Herein, the photochromic and photoluminescence properties of BaMgSiO 4 :Bi 3+ ceramics were investigated. The BaMgSiO4:Bi3+ ceramics showed reversible photochromism from gray to pink upon alternating the 254 nm ultraviolet light and 532 nm laser irradiation. This is caused by the electron trapping and de-trapping in the oxygen vacancies of the BaMgSiO 4 :Bi 3+ host. This reversible behavior of photochromism was applied to fabricate different patterns on the surface of the BaMgSiO 4 :Bi 3+ ceramics, which exhibited the reversible dual-mode optical information recording and erasing abilities. The photoluminescence reversible modulation of the BaMgSiO 4 :Bi 3+ ceramics was obtained through the photochromic phenomenon. This modification behavior of luminescence could be applied to read-out the recording information in the BaMgSiO 4 :Bi 3+ ceramics. The coloration and bleaching of BaMgSiO 4 :Bi 3+ ceramics were dependent on the time of light stimulation, which facilitated multiplexing encoding. This photoluminescence and photochromism multiplexing of the BaMgSiO 4 :Bi 3+ ceramics enhanced the optical data storage capability.

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Localized exciton luminescence in YVO4:Bi3+

Cited by 10 publications

References 40 publications

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Luminescence Spectroscopy and Origin of Luminescence Centers in Bi-Doped Materials

Structure and spectroscopy characterization of La1-xSmxVO4 luminescent nanoparticles synthesized co-precipitation and sol-gel methods

Reversible multiplexing for optical information recording, erasing, and reading-out in photochromic BaMgSiO4:Bi3+ luminescence ceramics

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