Localized exciton bound to an isoelectronic trap in silicon

Radiative recombination of excitons in the transition-metal dichalcogenides MoS2:Cl2 and WS2:Br2

“…In contrast to isoelectronically-doped GaP or Si, where in the absence of external perturbations [10,16] the j-j coupling is manifested as a so-called A-B spectral doublet, the excitonic spectra of the layered TX 2 compounds, due to the lower symmetry, involve at least three zero-phonon lines. It can be seen in Fig.…”

“…[8] we reported the first observation of excitonic luminescence in tungsten dichalcogenides layered compounds 2H-WS 2 and 2H-WSe 2 , intercalated by the Br 2 and I 2 molecules during the crystal growth processes. The halogen molecule placed in the adjacent tetrahedral sites of the gap gives rise to the neutral radiative centre, with properties similar to those of the isoelectronic impurities in GaP [9] or Si [10], which provide strong bound-exciton luminescence of the indirect band-gap semiconductor. The excitonic photoluminescence (PL) has been also observed in synthetic 2H-MoS 2 single crystals grown using chlorine Cl 2 as transport agent [11].…”

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

“…Foreign atoms, isoelectronically substituting host atoms in the silicon lattice, have been reported to capture separate charge carriers forming at first a charged state which then in turn attracts opposite charge carriers creating a bound exciton. 29 The concentration of excitons bound to such isoelectronic defects is proportional to the concentration of the charge carriers as well as to the defect concentration resulting in k 1. Krustok et al 30 reported excitons bound to closely located neutral donor-acceptor pairs acting as isoelectronic traps in CuInS 2 , a chalcopyrite ternary compound with electronic properties similar to those in CuInSe 2 .…”

Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

“…First, Weber et al experimentally investigated emissions observed in Si:Al in detail; then, they suggested that the IETs in Si:Al were produced by a substitutional pair having C 3v symmetry along the 〈111〉 axis. [70] Subsequently, Alt and Tapfer revealed that N atoms participate in these emissions, [71] and Modavis and Hall realized strong luminescence by the co-doping of Al and N. [67] Moreover, Tajima and Kamata utilized these emissions to estimate the residual N concentration in Si wafers. [72] The IET state is approximately 30 meV below the CBM.…”

“…[72] The IET state is approximately 30 meV below the CBM. [70] The most recent studies were conducted by Iizuka and Nakayama using first-principles calculations. [73,74] They clarified the stable atomic configuration of the Al-N pair: the substitutional nearest-neighbor configuration is preferred over configurations comprising interstitials [ Fig.…”