2020
DOI: 10.1109/tpel.2020.2965019
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Localization and Detection of Bond Wire Faults in Multichip IGBT Power Modules

Abstract: Multi-chip Insulated Gate Bipolar Transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire liftoff is one of the major failure modes. This paper presents a technique to diagnose bond wire lift-off by analyzing the on-state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip t… Show more

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Cited by 25 publications
(8 citation statements)
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“…If the current Ic is given with (12), then for inverter operation the duty-variation (PWM pulse pattern) of the IGBTif a suitably fast switching frequency is assumedcan be written as (13) [31].…”
Section: B Converter Thermal Loading Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…If the current Ic is given with (12), then for inverter operation the duty-variation (PWM pulse pattern) of the IGBTif a suitably fast switching frequency is assumedcan be written as (13) [31].…”
Section: B Converter Thermal Loading Modelmentioning
confidence: 99%
“…This information can be taken forward to design more reliable systems or mechanisms that will help extend converter lifetime. This model can be combined with a detailed failure detection and localization method such as in [12] where it will be used as an additional parameter to make the localization faster and more accurate.…”
Section: B Assessment Of Consumed Lifetimementioning
confidence: 99%
“…We employed the measured thermal resistance, Rth, as a criterion for determining the accuracy of our simulations. Of course, electrical characteristics are also popularly used as critical factors describing the performance and reliability of a developed power module [32,33]. However, in this work, it is difficult to perform a one-to-one comparison of the characterized electrical parameters (e.g., VCE(ON) or RCE(ON) values) with the electrical FEM simulation results in Figs.…”
Section: Performance Evaluation Of the Fabricated Power Modulementioning
confidence: 99%
“…The acceptable number of chip losses for IGBT modules depends on the working environment and working requirements. Generally, 10% chip losses in IGBT modules and 70% bond wire lift-off on the chip are considered acceptable [23]. Therefore, for the DIM800NSM33-F IGBT module, the detection of two chip failures in 16 chips is set as the safety margin.…”
Section: Multi-chip Igbt Module Failure Mechanism and Structurementioning
confidence: 99%