Local structural changes induced by ion bombardment in magnetron sputtered ZnO: Al films: Raman, XPS, and XAS study

Meng, Fanping; Ge, Fangfang; Chen, Yuyun; Xu, Guanying Bianca; Huang, Feng

doi:10.1016/j.surfcoat.2018.04.013

Cited by 47 publications

(20 citation statements)

References 34 publications

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“…Meanwhile, ZnO has a wide application field, including energy conversion and storage, optoelectronics, and environmental remediation [2][3][4]. At present, various kinds of synthetic methods were adopted for preparing the ZnO nanostructure, such as sol-gel, chemical vapor deposition, ultrasonic-assisted method, magnetron sputtering, molecular beam epitaxy, and electrochemical deposition [5][6][7][8][9][10]. Among the preparation methods above, the electro-chemical deposition route provides a better alternative for its facile and feasible operation process.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Vacancy-Mediated Interfacial Charge Transfer of Au/ZnO Schottky Heterojunctions for Enhanced UV Photodegradation

Shao

Jia

Zhang

et al. 2020

International Journal of Photoenergy

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We intend to report an interesting phenomenon related to the different interfacial transfer processes between ellipsoidal-like ZnO (E-ZnO) and rod-like ZnO (R-ZnO) nanoheterojunctions witness by the nanosecond time-resolved transient photoluminescence (NTRT-PL) spectra. Fristly, E-ZnO and R-ZnO nanoarchitectures were fabricated via facilitating the electrochemical route; and then, they decorated it with dispersed Au nanoparticles (NPs) by the methods of ion-sputtering deposition, constituting Au/E-ZnO and Au/R-ZnO Schottky-heterojunction nanocomplex, which is characterized by SEM, XRD, Raman analysis, and UV-vis absorption spectra. Steady-state photoluminescence and NTRT-PL spectra of as-fabricated Au/E-ZnO and Au/R-ZnO nanocomposites were probed for interfacial charge transfer process under 266 nm femtosecond (fs) light irradiation. Simultaneously, a distinct diversification for the NTRT-PL spectra is observed, closely associating with oxygen vacancies (Vo), which is confirmed by X-ray photoelectron spectroscopy (XPS) and electron spin resonance (ESR) spectra. Furthermore, Au NPs act as an “annular bridge” and “transit depot” for interfacial charge transfer through local surface plasmon resonance (LSPR) effect and Schottky barrier, respectively, which is identified by NTRT-PL and time-resolved PL (TRPL) decay spectrum. Moreover, this mechanism is responsible for the enhanced photoelectrochemical (PEC) performances of methyl orange (MO) photodegradation under UV light irradiation.

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Section: Introductionmentioning

confidence: 99%

Oxygen Vacancy-Mediated Interfacial Charge Transfer of Au/ZnO Schottky Heterojunctions for Enhanced UV Photodegradation

Shao

Jia

Zhang

et al. 2020

International Journal of Photoenergy

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“…It is known that their physical properties are dependent on their structure, defects are inherent in these films due to methods of production, and the existence of flaws can undermine the properties of these structures. Meng et al investigated the effect of ion bombardment on structural changes of ZnO/Al films employing X‐ray Raman, XPS (see Section 6), and XAS at BL14W of SSRF. XAS at Zn K‐edge was performed at various depositing voltages.…”

Section: Absorptionmentioning

confidence: 99%

Review on applications of synchrotron‐based X‐ray techniques in materials characterization

2020

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Synchrotron radiation (SR), as a result of its high-intensity, brilliant, monochromatic, and collimated beams, is becoming one of the most crucial components of research in various fields of materials science such as nanomaterials, biomaterials, and energy materials. SR-based characterization methods can be employed to analyze different systems such as powders, thin films, and bulk forms having complex crystalline or amorphous structures. In this review, peculiarities of SR are briefly explained. Moreover, various techniques carried out utilizing this instrument for material characterization such as X-ray powder diffraction, grazing-incidence X-ray diffraction, small/ wide-angle X-ray scattering, X-ray absorption spectroscopy, different techniques of X-ray imaging, X-ray photoelectron spectroscopy, and X-ray microprobes/nanoprobes are presented. As a result, by shedding light on the advantages of SR and its superiority to the equivalent laboratory experiments, researchers are recommended to exploit the capabilities of this invaluable tool in their materials characterization.

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“…ITO films deposited by MS 1 are industry standard for numerous applications in photovoltaics, 2 flat-panel displays, 3 organic light-emitting diodes, 4 and smart windows. 5,6 On the other hand, Al- or Ga-doped ZnO (AZO or GZO), 7−21 Nb-doped TiO 2, 22,23 and BaSnO 3 24,25 films as an alternative material to replace the ITO films have been tried by the MS technique. However, one issue concerning magnetron-sputtered TCO films has yet to be resolved, namely, the nonuniform spatial distribution of electrical resistivity (ρ) on the substrate surface.…”

Section: Introductionmentioning

confidence: 99%

“…However, one issue concerning magnetron-sputtered TCO films has yet to be resolved, namely, the nonuniform spatial distribution of electrical resistivity (ρ) on the substrate surface. 1,7−21 Specifically, the area of the substrate opposite to the erosion zone of the target typically exhibits a relatively high ρ compared to that of other regions farther from this area. 1,7−21 At present, the dominant factors responsible for this degradation of the electrical properties of the substrate opposite to the erosion zone of the target are not thoroughly understood.…”

Section: Introductionmentioning

confidence: 99%

“…1,7−21 Specifically, the area of the substrate opposite to the erosion zone of the target typically exhibits a relatively high ρ compared to that of other regions farther from this area. 1,7−21 At present, the dominant factors responsible for this degradation of the electrical properties of the substrate opposite to the erosion zone of the target are not thoroughly understood. In an effort to address this issue, we have been investigating the influence of the erosion zone of MS targets on carrier transport in magnetron-sputtered AZO films on glass substrates.…”

Section: Introductionmentioning

confidence: 99%

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Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers

et al. 2019

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The use of a 10-nm-thick buffer layer enabled tailoring of the characteristics, such as film deposition and structural and electrical properties, of magnetron-sputtered Al-doped ZnO (AZO) films containing unintentionally retained Ar atoms. The AZO films were deposited on glass substrates coated with the buffer layer via direct-current magnetron sputtering using Ar gas, a substrate temperature of 200 °C, and sintered AZO targets with an Al2O3 content of 2.0 wt %. The use of a Ga-doped ZnO film possessing a texture with a specific well-defined orientation as the buffer layer was very effective for improving the crystallographic orientation, reducing the residual stress, and improving the carrier transport of the AZO films. The residual compressive stress and in-grain carrier mobility were responsible for the retention of Ar atoms by the films, as observed using an electron probe microanalyzer.

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Local structural changes induced by ion bombardment in magnetron sputtered ZnO: Al films: Raman, XPS, and XAS study

Cited by 47 publications

References 34 publications

Oxygen Vacancy-Mediated Interfacial Charge Transfer of Au/ZnO Schottky Heterojunctions for Enhanced UV Photodegradation

Oxygen Vacancy-Mediated Interfacial Charge Transfer of Au/ZnO Schottky Heterojunctions for Enhanced UV Photodegradation

Review on applications of synchrotron‐based X‐ray techniques in materials characterization

Improvement of the Properties of Direct-Current Magnetron-Sputtered Al-Doped ZnO Polycrystalline Films Containing Retained Ar Atoms Using 10-nm-Thick Buffer Layers

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