Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic

Abstract

A doping approach for p-type ZnO is reported which is reproducible and long-time stable. For p-type doping the zinc oxide layers were doped simultaneously with nitrogen and arsenic in metal organic vapor phase epitaxy. The conductivity type of the layers was investigated by scanning capacitance microscopy, a technique based on local capacitance-voltage analysis (C-V) with submicron spatial resolution. Depending on the growth parameters, largely extended p-type domains were observed, surrounded by n-type regions. The differences in local conductivity type are directly correlated to the topography as measured with atomic force microscopy revealing p-type for smooth, two-dimensional surfaces and n-type signals in the case of three-dimensional island growth or structural defects, i.e., microcracks or surface pits.

The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures

“…Since the formation energy of SFs is expected to be quite low (%100 meV only [28]), the pronounced change in concentration upon annealing seems reasonable. Spatially resolved scanning capacitance measurements on group V doped ZnO layers find a correlation between morphological defects and p-type regions embedded in n-type layers [29][30][31], supporting our assumption.…”

A Theoretical Study on Van Der Pauw Measurement Values of Inhomogeneous Compound Semiconductor Thin Films

“…The mobility μ is calculated from the ratio between the values of the Hall coefficient R H and resistivity ρ in Hall-effect measurements, as shown in Equation (5). If the degree of Figure 5 and Table 3, as a function of the total heterogeneous region ratio; the heterogeneous regions were concentrated locally in the samples.…”

“…Unintentional inhomogeneity occurred in thin films may be easy or difficult to recognize instantly. Examples of the unintentional appearance of inhomogeneity in thin films appear as metallic droplets in III-V nitride semiconductors such as InN [2,3], phase separation in ternary alloys such as InGaN thin films [2,4], and inhomogeneous doping in ptype impurity-doped ZnO thin films [5]. Most of these compound semiconductor thin films are under development to realize high performance novel devices.…”

Low temperature growth of ZnO thin film by metalorganic chemical vapor deposition

“…Polycrystalline ZnO films can be easily grown on various substrates using methods such as PLD (pulsed laser deposition), sputtering, MOCVD (metalorganic chemical vapour deposition), and MBE (molecular beam epitaxy) [3][4][5][6]. The problems with ZnO film growth remaining are epitaxial growth, p-type doping, and achieving a high incorporation of Mg atoms [7,8].…”