Local Loading Effect in Selective Silicon Epitaxy

Ishitani, Akihiko; Endo, Nobuhiro; Tsuya, Hideki

doi:10.1143/jjap.23.l391

Cited by 46 publications

(13 citation statements)

References 8 publications

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“…These trends are related to the selective nature of the deposition and have also been reported in the past from selective silicon epitaxy. 12 However, for this process it has also been shown that some control of loading effects and pattern dependency can be achieved by adjusting the partial pressure of HCl. 13,14 A CVD deposition on blanket wafers may be described using the classical boundary layer theory.…”

Section: Resultsmentioning

confidence: 99%

Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

Mohammadi

Boer

Scholtes

et al. 2012

ECS J. Solid State Sci. Technol.

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The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yield lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates. A very low standard deviation, less than 0.02, is achieved while at the same time making it independent of oxide coverage ratios and window sizes.

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Section: Resultsmentioning

confidence: 99%

Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

Mohammadi

Boer

Scholtes

et al. 2012

ECS J. Solid State Sci. Technol.

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“…We observe polycrystalline SiGe deposits on masked regions, although epitaxial material is selectively deposited on the exposed substrates. The polycrystalline deposits actually simplify the growth issue to some extent as loading effects [9] are greatly reduced. In our study, we utilized many different characterization techniques to monitor the structural integrity of Ge/Si SEG films.…”

Section: Results From Grant Daah04-96-1 -0364mentioning

confidence: 99%

Si Based Nanostructure Growth Subsystem with Atomic Scale Control. Supersonic Molecular Beam Array Cell

Wang¹

1998

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“…As studied by Ishitani et al, 10 the addition of HCl during epitaxial growth shifts the chemical system to a more reactive controlled region by reducing the supersaturation of the Si species, thus minimizing the loading effect. As studied by Ishitani et al, 10 the addition of HCl during epitaxial growth shifts the chemical system to a more reactive controlled region by reducing the supersaturation of the Si species, thus minimizing the loading effect.…”

Section: Resultsmentioning

confidence: 99%

Chemical vapor deposition of TiSi2 using an industrial integrated cluster tool

Maury

Rostoll

Gayet

et al. 1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffects of temperature and HCl flow on the SiGe growth kinetics in reduced pressure-chemical vapor deposition Influence of gas composition on wafer temperature in a tungsten chemical vapor deposition reactor: Experimental measurements, model development, and parameter identification Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization J.

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Local Loading Effect in Selective Silicon Epitaxy

Cited by 46 publications

References 8 publications

Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

Si Based Nanostructure Growth Subsystem with Atomic Scale Control. Supersonic Molecular Beam Array Cell

Chemical vapor deposition of TiSi2 using an industrial integrated cluster tool

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