Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

Neul, Malte; Sprave, Isabelle V.; Diebel, Laura K.; Zinkl, Lukas G.; Fuchs, Florian; Yamamoto, Yuji; Vedder, Christian; Bougeard, Dominique; Schreiber, Lars R.

doi:10.1103/physrevmaterials.8.043801

Cited by 3 publications

(2 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results obtained can be interpreted in such a way that zinc atoms in silicon, with strong compensation, form not only single deep levels but also an entire band of levels characteristic of nanoclusters (or quantum dots) with large carrier capture cross sections [7].…”

Section: Resultsmentioning

confidence: 98%

“…To elucidate the mechanism of current ows in HC samples of silicon diffusion-doped with zinc with different types of conductivity and degrees of compensation, samples of both n-and p-type conductivities with resistivities lying in the range of 10 2 ÷10 5 Ω•cm at T = 300 K were fabricated using the method high-temperature diffusion according to the technology described in [6]. Ohmic contacts to the studied samples were created by laser soldering of copper wire with a diameter of 100 µm or by applying conductive silver glue [7].…”

Section: Materials and Experimental Detailsmentioning

confidence: 99%

See 1 more Smart Citation

Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

Arzikulov,

Radzhabova,

et al. 2024

Preprint

View full text Add to dashboard Cite

This work is devoted to the study of current flow in diffusion-doped zinc silicon samples in the dark and when illuminated with integral light with an intensity in the range from 0.6 to 140 lx and at a temperature of 300 K. At T = 300 K and in the dark, the view the current-voltage characteristic (CVC) contained all areas characteristic of semiconductors with deep energy levels. It was found that when illuminated with integral light, the type of CVCs of the studied Si samples depended on the value of the applied voltage, the electrical resistivity of the samples, the light intensity, and their number reached up to 6. In this case, linear, sublinear, and superlinear sections were observed, as well as the switching point (sharp current jump) and areas with negative differential conductivities (NDC). The existence of these characteristic areas of the applied voltage and their character depended on the intensity of the integral light. The experimental data obtained were interpreted in connection with the formation of low dimensional objects with the participation of multiply charged zinc nanoclusters in the bulk of silicon. They changed the energy band structure of single-crystal silicon, which affected generation-recombination processes in Si, leading to the types of CVCs observed in the experiment.

show abstract

Section: Resultsmentioning

confidence: 98%

Section: Materials and Experimental Detailsmentioning

confidence: 99%

Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

Arzikulov,

Radzhabova,

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

Shadow Wall Epitaxy of Compound Semiconductors toward All in Situ Fabrication of Quantum Devices

von den Driesch,

Kutovyi,

Khamphasithivong

et al. 2024

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

The realization of advanced semiconductor nanostructures requires the development of epitaxial growth schemes to mitigate the detrimental effects of ex situ device processing. With this perspective, we introduce a selective growth concept for molecular beam epitaxy (MBE) in which parts of the sample area are shadowed using prefabricated walls. Systematic analysis of the crystalline and optical properties by X-ray diffraction techniques and photoluminescence reveal a comparably good quality of the structured ZnSe-based thin films, compared to reference samples. We transfer this concept toward epitaxy of more complex II−VI heterostructures to demonstrate the versatility of our epitaxial approach for the development of fully in situ processed quantum devices.

show abstract

Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling

Volmer,

Struck,

Sala

et al. 2024

npj Quantum Inf

View full text Add to dashboard Cite

In Si/SiGe heterostructures, the low-lying excited valley state seriously limits the operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method for two-dimensional mapping of the local valley splitting by detecting magnetic field-dependent anticrossings of ground and excited valley states using entangled electron spin-pairs as a probe. The method has sub-μeV energy accuracy and a nanometer lateral resolution. The histogram of valley splittings spanning a large area of 210 nm by 18 nm matches well with statistics obtained by the established but time-consuming magnetospectroscopy method. For the specific heterostructure, we find a nearly Gaussian distribution of valley splittings and a correlation length similar to the quantum dot size. Our mapping method may become a valuable tool for engineering Si/SiGe heterostructures for scalable quantum computing.

show abstract

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

Cited by 3 publications

References 44 publications

Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

Shadow Wall Epitaxy of Compound Semiconductors toward All in Situ Fabrication of Quantum Devices

Mapping of valley splitting by conveyor-mode spin-coherent electron shuttling

Contact Info

Product

Resources

About