Shadow Wall Epitaxy of Compound Semiconductors toward All in Situ Fabrication of Quantum Devices
Nils von den Driesch,
Yurii Kutovyi,
Felix Khamphasithivong
et al.
Abstract:The realization of advanced semiconductor nanostructures requires the development of epitaxial growth schemes to mitigate the detrimental effects of ex situ device processing. With this perspective, we introduce a selective growth concept for molecular beam epitaxy (MBE) in which parts of the sample area are shadowed using prefabricated walls. Systematic analysis of the crystalline and optical properties by X-ray diffraction techniques and photoluminescence reveal a comparably good quality of the structured Zn… Show more
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