Local electronic structure of Cr in the II–VI diluted ferromagnetic semiconductor Zn1-xCrxTe

Kobayashi, Masaki; Ishida, Y.; Hwang, J. I.; Song, G. S.; Fujimori, A.; Yang, Chunlei; Lee, L.; Lin, Hong Ji; Huang, D. J.; Chen, C. T.; Takeda, Yukiharu; Terai, Kenta; Fujimori, Shin–ichi; Okane, Tetsuo; Saitoh, Y.; Yamagami, Hiroshi; Kobayashi, Keisuke; Tanaka, A.; Saito, H.; Ando, Koji

doi:10.1088/1367-2630/10/5/055011

Cited by 15 publications

(9 citation statements)

References 47 publications

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“…The observed structures are comparable with those previously reported for Cr 2+ /Cr 3+ compounds, serving as a spectroscopic fingerprint of Cr3Te4. [31,32] For the Cr3Te4 monolayer, the XMCD curves in Fig. 4a-b demonstrate a non-zero signal up to 330 K for both NI and GI.…”

Section: Resultsmentioning

confidence: 97%

Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy

Chua

Zhou

et al. 2021

Advanced Materials

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The realization of long‐range magnetic ordering in 2D systems can potentially revolutionize next‐generation information technology. Here, the successful fabrication of crystalline Cr3Te4 monolayers with room temperature (RT) ferromagnetism is reported. Using molecular beam epitaxy, the growth of 2D Cr3Te4 films with monolayer thickness is demonstrated at low substrate temperatures (≈100 °C), compatible with Si complementary metal oxide semiconductor technology. X‐ray magnetic circular dichroism measurements reveal a Curie temperature (Tc) of v344 K for the Cr3Te4 monolayer with an out‐of‐plane magnetic easy axis, which decreases to v240 K for the thicker film (≈7 nm) with an in‐plane easy axis. The enhancement of ferromagnetic coupling and the magnetic anisotropy transition is ascribed to interfacial effects, in particular the orbital overlap at the monolayer Cr3Te4/graphite interface, supported by density‐functional theory calculations. This work sheds light on the low‐temperature scalable growth of 2D nonlayered materials with RT ferromagnetism for new magnetic and spintronic devices.

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Section: Resultsmentioning

confidence: 97%

Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy

Chua

Zhou

et al. 2021

Advanced Materials

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“…In (Ga,Mn)N the modulation of the Mn charge state has been mainly considered in relation to its possible effect on the magnetic response. However, the reports are highly controversial: e.g., in some works the reduction from the neutral state Mn 3+ to Mn 2+ has been found to decrease the FM response of (Ga,Mn)N layers (Yang et al, 2008), while elsewhere it has been argued that paramagnetic (Ga,Mn)N with a majority of Mn 3+ can be rendered FM via doubleexchange mechanisms if Mn 3+ and Mn 2+ coexist in the same sample (Sonoda et al, 2007). Furthermore, codoping with acceptors (Mg) is even reported to act not univocally, but depending on the quality of the matrix to either enhance or quench the FM response (Reed et al, 2005).…”

Section: B Experimental Evidences For Spinodal Nanodecomposition In (...mentioning

confidence: 99%

“…The electronic structure of the Cr ions and host bands was investigated in Zn 1−x Cr x Te (x = 0.03 and 0.15) using XMCD and photoemission spectroscopy (Kobayashi et al, 2008). It was concluded that neither doubleexchange mechanism nor carrier-induced ferromagnetism are important, and the inhomogeneous distribution of Cr atoms dominantly influences the FM properties of Zn 1−x Cr x xTe.…”

Section: Spinodal Nanodecomposition In (Zncr)tementioning

confidence: 99%

“…Finally, it is pointed out that spinodal nanodecomposition can be viewed as a new class of bottom-up approach to nanofabrication. The detection of ferromagnetic features persisting up to above room temperature in a variety of magnetically doped semiconductors and oxides has been one of the most surprising developments in materials science over recent years (Bonanni, 2007;Coey et al, 2010;Dietl, 2003;Fukumura and Kawasaki, 2013;Kobayashi et al, 2008;Kuzemsky, 2013;Liu et al, 2005;Makarova, 2010;Nealon et al, 2012;Pearton et al, 2003;Roever et al, 2011;Sawicki et al, 2013;Yao et al, 2012). In particular, the presence of robust ferromagnetism in technologyrelevant semiconductors (e.g., GaN and Si) and oxides (e.g., ZnO and TiO 2 ) has promised to open the door to a wide exploitation in devices of remarkable spintronic functionalities found in dilute ferromagnetic semiconductors [such as (Ga,Mn)As] below their Curie temperature T C , so far not exceeding 200 K (Dietl and Ohno, 2014;Jungwirth et al, 2014;Sato et al, 2010).…”

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confidence: 99%

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Spinodal nanodecomposition in semiconductors doped with transition metals

et al. 2015

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This review presents the recent progress in computational materials design, experimental realization, and control methods of spinodal nanodecomposition under three-and two-dimensional crystal-growth conditions in spintronic materials, such as magnetically doped semiconductors. The computational description of nanodecomposition, performed by combining first-principles calculations with kinetic Monte Carlo simulations, is discussed together with extensive electron microscopy, synchrotron radiation, scanning probe, and ion beam methods that have been employed to visualize binodal and spinodal nanodecomposition (chemical phase separation) as well as nanoprecipitation (crystallographic phase separation) in a range of semiconductor compounds with a concentration of transition metal (TM) impurities beyond the solubility limit. The role of growth conditions, codoping by shallow impurities, kinetic barriers, and surface reactions in controlling the aggregation of magnetic cations is highlighted. According to theoretical simulations and experimental results the TM-rich regions appear in the form of either nanodots (the dairiseki phase) or nanocolumns (the konbu phase) buried in the host semiconductor. Particular attention is paid to Mn-doped group III arsenides and antimonides, TM-doped group III nitrides, Mn-and Fe-doped Ge, and Cr-doped group II chalcogenides, in which ferromagnetic features persisting up to above room temperature correlate with the presence of nanodecomposition and account for the application-relevant magnetooptical and magnetotransport properties of these compounds. Finally, it is pointed out that spinodal nanodecomposition can be viewed as a new class of bottom-up approach to nanofabrication.

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“…Within this prospective research field huge efforts are being made in order to realize diluted magnetic semiconductors (DMSs), materials which can sustain ferromagnetic order above room 3 temperature. In search for the room temperature ferromagnetism (RTFM) in DMSs [6][7][8][9][10] along with the most extensively studied Mn-based systems [3,[11][12][13], possibilities to utilize other TM impurities (Fe, Co, Cr, …) in various wide band-gap semiconductor hosts are also being explored [6,[14][15][16][17][18]. Iron-based DMSs are promising in this respect, with RTFM already achieved in a number of III-V [19,20], and II-VI semiconductor hosts [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Survey of electronic properties and local structures around Fe in selected multinary chalcogenides

Radisavljević

Novaković

Mahnke

et al. 2019

Journal of Alloys and Compounds

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Local electronic structure of Cr in the II–VI diluted ferromagnetic semiconductor Zn_1-xCr_xTe

Cited by 15 publications

References 47 publications

Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy

Room Temperature Ferromagnetism of Monolayer Chromium Telluride with Perpendicular Magnetic Anisotropy

Spinodal nanodecomposition in semiconductors doped with transition metals

Survey of electronic properties and local structures around Fe in selected multinary chalcogenides

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