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Campagna, M.; Wertheim, G. K.; Shanks, H. R.; Zumsteg, F. C.; Banks, E.

doi:10.1103/physrevlett.34.738

Cited by 99 publications

(35 citation statements)

References 19 publications

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“…It has been concluded that the 7i* conduction band in Re0 3 is mainly of Re 5d character. 12 Campagna et al 5 from XPS measurements of Na x W0 3 verified similarly the essentially W 5d character of the conduction band, filled up by electrons provided by Na atoms which are so far fully ionized. So, in our colored films the electronic states near the Fermi level are also expected to have an essentially W 5d character.…”

mentioning

confidence: 68%

Charge Transfer in Amorphous Colored WO3Films Observed by X-Ray Photoelectron Spectroscopy

1976

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mentioning

confidence: 68%

Charge Transfer in Amorphous Colored WO3Films Observed by X-Ray Photoelectron Spectroscopy

1976

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“…In agreement with this idea, plasmon satellites were found to be much stronger for the alkali metals than for the alkaline earth metals and Al, where the carrier density is higher. The implications of Langreth's work were further developed by Wertheim who studied core lines in photoemission spectra of sodium tungsten bronzes Na x WO 3 [204,205] . These are free-electron like metallic materials with the carrier density determined by the Na composition parameter x.…”

Section: Satellite Structure In Core Level Photoemission Of Doped Sammentioning

confidence: 97%

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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This article reviews the impact of defects and doping on the surface electronic structure of indium oxide, a wide gap oxide semiconductor which under degenerate doping becomes an important transparent conducting material. Topics covered include recent evidence for carrier accumulation at In 2 O 3 surfaces when there is a low bulk doping level and the profound effects of doping on core and valence photoemission spectra. The importance of molecular beam epitaxy in growth of single crystal samples is emphasised. IntroductionTransparent conducting oxides (TCOs) combine the usually orthogonal properties of optical transparency in the visible region with a high electrical conductivity [1][2][3][4]. TCOs already find widespread application as the window electrode in display devices including liquid crystal displays and electroluminescent display devices. A TCO electrode is also an essential component in many designs of solar cell [5,6]. In addition there is a growing interest in "transparent electronics" where TCO materials are employed in a more active role, for example in light emitting diodes [7] or lasers operating in the ultraviolet regime. The TCO market is worth around $1.6 billion per annum, with upward of 80 % of this sum based on LCD displays. Indium oxide (In 2 O 3 ) is amenable to n-type doping with Sn to give a prototype TCO usually-but somewhat misleadingly-referred to as indium tin oxide or ITO. At present ITO dominates the TCO market as the material offers a better combination of conductivity and transparency than alternatives such as doped ZnO or SnO 2 . In principle, doped CdO could achieve better performance [8], but Cd is highly toxic. Despite some recent reports of respiratory disease and even deaths [9] among workers in the ITO industry, indium is generally regarded as relatively

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“…55 Satellite energies for these materials are all around 1 -2 eV. Wertheim [48][49][50]50 suggested an alternative limiting model for the satellites in this family of narrowband metals. This involves a screening mechanism in which the Coulomb potential of the core hole at an ionized atom creates a localized trap state.…”

Section: G Satellite Structure In Core-level Photoemission From Tl 2mentioning

confidence: 99%

Experimental and theoretical study of the electronic structure of HgO andTl2O3

et al. 2005

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The electronic structures of HgO and Tl 2 O 3 have been investigated by valence and core-level x-ray photoemission, x-ray absorption, and x-ray emission spectroscopies. Valence-band photoemission under Al K␣ excitation is dominated by the metal 5d partial density of states and thus provides a sensitive probe of shallow core mixing into the O 2p valence-band states. Conversely O K shell emission is determined by the O 2p partial density of states and therefore allows the extent of corresponding mixing of O 2p character into the shallow core states to be measured. The experimental work is supported by band-structure calculations carried out within the framework of density-functional theory. It is shown that the bonding in HgO involves significant mixing between O 2p states and both Hg 6s and shallow core 5d states: the calculated O 2p partial density of states mirrors the O K shell emission spectrum and reveals significant O 2p character within the shallow core Hg 5d states. There is, however, little direct on-site mixing between the Hg 6s and 5d states. In Tl 2 O 3 , the hybridization of the deeper metal 5d states with O 2p states is much less pronounced than in HgO. Moreover, the states at the bottom of what is conventionally regarded as the O 2p valence band are found in fact to have very strong Tl 6s atomic character. The photoemission spectrum of Tl 2 O 3 shows a well-defined metallic Fermi edge: the shape of the structure around the photoemission onset suggests that the metallic nature of Tl 2 O 3 arises from an occupation of states above the main valence-band edge, probably arising from oxygen vacancy defects. The conduction electrons of Tl 2 O 3 are strongly perturbed by ionization of Tl core levels, giving rise to distinctive plasmon satellites in core x-ray photoemission spectroscopy.

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Local Character of Many-Body Effects in X-Ray Photoemission from Transition-Metal Compounds:NaxWO3

Cited by 99 publications

References 19 publications

Charge Transfer in Amorphous Colored WO3Films Observed by X-Ray Photoelectron Spectroscopy

Charge Transfer in Amorphous Colored WO3Films Observed by X-Ray Photoelectron Spectroscopy

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Experimental and theoretical study of the electronic structure of HgO andTl2O3

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