Charge Transfer in Amorphous Colored W<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Films Observed by X-Ray Photoelectron Spectroscopy

Hollinger, G.; Đức, Trần Minh; Deneuville, A.

doi:10.1103/physrevlett.37.1564

Cited by 123 publications

(49 citation statements)

References 11 publications

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“…However a slight asymmetry is apparent on the low binding energy side of the 4f 7/2 emission peak. This shoulder is consistent with a small fraction of the sampled tungsten being in the +5 oxidation state [10,21] as desired. Fitted peaks are shown in the figure but as the sample was transferred ex situ, quantification is not appropriate.…”

Section: Film Composition and Thicknesssupporting

confidence: 80%

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Orientationally textured thin films of WO_xdeposited by pulsed laser deposition

Caruana

Cropper

2014

Mater. Res. Express

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Pulsed laser deposition from a compound target in an oxygen atmosphere has been used to produce sub-stoichiometric WO x films of 30 nm thickness on Si(100) and SrTiO 3 (100)substrates. The growth temperature was 500°C and the pressure of the O 2 background was 2.5×10 -2 mbar. The films have been assessed using X-ray photoelectron spectroscopy, X-ray reflectivity, X-ray diffraction and scanning electron microscopy. The chemical shift of the tungsten 4f states showed that the tungsten was close to fully oxidised. X-ray reflectivity measurements and scanning electron micrographs showed the films on SrTiO 3 (100) to be much smoother than those on Si(100) which were granular. X-ray diffraction in the BraggBrentano geometry combined with texture analysis showed that the films were textured with indicate that the mechanism for the difference is the overall deposition rate, which is affected by fluence. On Si(100) the films were rougher and exhibited only uniaxial texture.Caruana and Cropper, PLD of WO 3 2

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Section: Film Composition and Thicknesssupporting

confidence: 80%

“…[18,19,20,21]. The XPS spectra showed no evidence of any tungsten in the metallic state, and quantification of the survey scan using the Schofield sensitivity factors was consistent with a composition ratio close to 1:3.…”

Section: Film Composition and Thicknessmentioning

confidence: 80%

Orientationally textured thin films of WO_xdeposited by pulsed laser deposition

Caruana

Cropper

2014

Mater. Res. Express

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“…The coloration efficiency of WO 3−x (x < 0.4) films has been reported to increase with increasing O deficiency. 87 Their typical blue coloration has been correlated with a broad absorption band with a maximum at 900 nm (∼1.38 eV), 78,79 although this feature has been observed in amorphous films. Photoluminiscence (PL) spectra 88 exhibited an emission peak at 550 nm (∼2.26 eV), and photoelectron measurements 79,89 confirmed the presence of a defect state attributed to O vacancies at ∼2 eV above the VB.…”

Section: B Womentioning

confidence: 99%

“…77 However, the microscopic origin of this effect, which is intimately connected with the typical blue coloration of WO 3−x films, 78,79 has been longly debated, and several models have been put forward for rationalizing experimental observations. 77,80,81 On the theory side, a few first-principle investigations have been performed on O-deficient RT monoclinic WO 3 , [82][83][84] but among them only one 85 employed state-of-the-art methods yielding a correct description of the bulk electronic structure.…”

Section: B Womentioning

confidence: 99%

Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Gerosa

Bottani

Caramella

et al. 2015

The Journal of Chemical Physics

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We investigate the behavior of oxygen vacancies in three different metal-oxide semiconductors\ud (rutile and anatase TiO2, monoclinic WO3, and tetragonal ZrO2) using a recently proposed hybrid\ud density-functional method in which the fraction of exact exchange is material-dependent but obtained\ud ab initio in a self-consistent scheme. In particular, we calculate charge-transition levels relative to the\ud oxygen-vacancy defect and compare computed optical and thermal excitation/emission energies with\ud the available experimental results, shedding light on the underlying excitation mechanisms and related\ud materials properties. We find that this novel approach is able to reproduce not only ground-state\ud properties and band structures of perfect bulk oxide materials but also provides results consistent\ud with the optical and electrical behavior observed in the corresponding substoichiometric defective\ud systems. C 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.493180

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“…In this paper, we descri be progress toward a tandem PV -EC device composed of a wide-gap amofphou s SiC alloy (a-SiC: H) PV cell and an all solid-state EC device based on Lidoped W0 3 . Since its discovery in 1969, electrochromism in transition metal oxides has been studied [6]. Still, the fundamental mechanism of the change in optical properties remains controversial [7][8][9][10]. For device engineering.…”

Section: Introductionmentioning

confidence: 99%

Semi-transparent a-SiC:H solar cells for self-powered photovoltaic-electrochromic devices

Bechinger¹,

Benson²,

Branz³

1996

Journal of Non-Crystalline Solids

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Self-powered ·smart' windows for active control of building heating and cooling represent a potential new market for amorphous-silicon based photovoltaics. Retrofit applications to existing windows are facilitated by the tandem photovoltaic-electrochromic (PV-EC) device. in which a wide-gap amorphous silicon-based alloy (a-SiC:H) photovoltaic cell is deposited together with an EC optical transmi uance modulator in a monolithic coating on a single substrate. In this paper, studies of transparent wide-gap a-SiC:H thin-fil ms and p-i-n cells designed for use in the PV -EC device are described. Using optimized a-SiC:H i-layer material, J,c of 3.9 mA/cm 2 and Vo.: of 0.92 V is achieved, adequate to color our low-voltage Li-based EC devices in less than one mi nute, and good progress toward the required transpare ncy is shown.

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Charge Transfer in Amorphous Colored WO3Films Observed by X-Ray Photoelectron Spectroscopy

Cited by 123 publications

References 11 publications

Orientationally textured thin films of WO_xdeposited by pulsed laser deposition

Orientationally textured thin films of WO_xdeposited by pulsed laser deposition

Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Semi-transparent a-SiC:H solar cells for self-powered photovoltaic-electrochromic devices

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Charge Transfer in Amorphous Colored WO3Films Observed by X-Ray Photoelectron Spectroscopy

Cited by 123 publications

References 11 publications

Orientationally textured thin films of WOxdeposited by pulsed laser deposition

Orientationally textured thin films of WOxdeposited by pulsed laser deposition

Defect calculations in semiconductors through a dielectric-dependent hybrid DFT functional: The case of oxygen vacancies in metal oxides

Semi-transparent a-SiC:H solar cells for self-powered photovoltaic-electrochromic devices

Contact Info

Product

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Orientationally textured thin films of WO_xdeposited by pulsed laser deposition

Orientationally textured thin films of WO_xdeposited by pulsed laser deposition