Orientationally textured thin films of WO_xdeposited by pulsed laser deposition

Abstract

Pulsed laser deposition from a compound target in an oxygen atmosphere has been used to produce sub-stoichiometric WO x films of 30 nm thickness on Si(100) and SrTiO 3 (100)substrates. The growth temperature was 500°C and the pressure of the O 2 background was 2.5×10 -2 mbar. The films have been assessed using X-ray photoelectron spectroscopy, X-ray reflectivity, X-ray diffraction and scanning electron microscopy. The chemical shift of the tungsten 4f states showed that the tungsten was close to fully oxidised. X-ray reflectivity measurements and scanning electron micrographs showed the films on SrTiO 3 (100) to be much smoother than those on Si(100) which were granular. X-ray diffraction in the BraggBrentano geometry combined with texture analysis showed that the films were textured with indicate that the mechanism for the difference is the overall deposition rate, which is affected by fluence. On Si(100) the films were rougher and exhibited only uniaxial texture.Caruana and Cropper, PLD of WO 3 2

Thin films of AlCrFeCoNiCu high-entropy alloy by pulsed laser deposition

“…Before use for deposition the target surface was cleaned in situ using a low laser fluence. The Loughborough PLD system [18,19] is based on a design by IWS Dresden [20] and has a base pressure of 2×10 -10 mbar. Deposition uses a pulsed and frequencydoubled Quanta Ray Nd:YAG laser operating at 10 Hz and wavelength 532 nm.…”

Pulsed Laser Deposited Films for Microbatteries

“…The suitability of PLF WO 3 films for EC applications was investigated as a function of the partial oxygen pressure during deposition. Studies of the texture and morphology of PLD 30-nm thick WO 3 films deposited on Si(100) and SrTiO 3 (100) substrates under an O 2 background of 2.5 Pa showed that: (i) The laser fluence (in the range of 5 to 15 J·cm −2 ) strongly influences the texture, (ii) the films grown on STO are biaxially textured with a smooth surface, and (iii) films deposited on Si are granular [250]. The fabrication of WO 3 thin films with color neutrality for applications as EC materials was realized by the deposition of films containing 20% of vanadium onto SnO 2 :F coated glasses at T s = 20 • C under P O 2 = 10 Pa.…”