2016
DOI: 10.1103/physrevb.94.094102
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Local atomic and magnetic structure of dilute magnetic semiconductor(Ba,K)(Zn,Mn)2As2

Abstract: We have studied the atomic and magnetic structure of the dilute ferromagnetic semiconductor system (Ba,K)(Zn,Mn)2As2 through atomic and magnetic pair distribution function analysis of temperature-dependent x-ray and neutron total scattering data. We detected a change in curvature of the temperature-dependent unit cell volume of the average tetragonal crystallographic structure at a temperature coinciding with the onset of ferromagnetic order. We also observed the existence of a well-defined local orthorhombic … Show more

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Cited by 32 publications
(25 citation statements)
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References 27 publications
(37 reference statements)
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“…24 A robust nearest-neighbor ferromagnetic correlation that exists above the ferromagnetic ordering temperature suggested potential to realize even higher Tc in further study. 25 Angle-resolved photoemission spectroscopy (ARPES) measurements showed clear impurity band of doping Mn well below the Fermi energy. [26][27] Besides, the excellent match of lattice parameters (within 5% mismatch) among "122" type DMS (Ba,K)(Zn,Mn) 2 As 2 , "122" iron-based superconductor (Ba,K)Fe 2 As 2 , and antiferromagnetic BaMn 2 As 2 is promising for fabricating heterojunctions with different types of ordering.…”
Section: Introductionmentioning
confidence: 99%
“…24 A robust nearest-neighbor ferromagnetic correlation that exists above the ferromagnetic ordering temperature suggested potential to realize even higher Tc in further study. 25 Angle-resolved photoemission spectroscopy (ARPES) measurements showed clear impurity band of doping Mn well below the Fermi energy. [26][27] Besides, the excellent match of lattice parameters (within 5% mismatch) among "122" type DMS (Ba,K)(Zn,Mn) 2 As 2 , "122" iron-based superconductor (Ba,K)Fe 2 As 2 , and antiferromagnetic BaMn 2 As 2 is promising for fabricating heterojunctions with different types of ordering.…”
Section: Introductionmentioning
confidence: 99%
“…In this respect, as a result of 20 years heavy investigation, record T c of (Ga,Mn)As film has been boosted from the initial 75 K 1 to ∼185 K until now. 4 Very recently Mn-doped ZnAs-based DMS materials [5][6][7][8][9][10][11] emerged, providing an alternative to study on new DMS thin films possessing better properties, especially under the circumstances that preliminary evidences in the bulk reported possible T c up to 230 K. 12 In this paper we deposited and studied the properties of the Ba 1x K x (Zn 1y Mn y ) 2 As 2 (BKZMA) (x = 0.03, 0.08; y = 0.15) DMS films for the first time. Over 320 films have been studied.…”
mentioning
confidence: 99%
“…The local magnetic structural analyses have been performed on antiferromagnetic MnO, the diluted magnetic semiconductor (Ba,K)(Zn,Mn) 2 As 2 and the frustrated spin systems NaCaCo 2 F 7 and NaSrCo 2 F 7 [21][22][23]. In these analyses, the neutron scattering intensity including both nuclear and magnetic components which is normalized by nuclear scattering lengths are transformed to PDF.…”
Section: Resultsmentioning
confidence: 99%