Load-pull + NVNA = enhanced X-parameters for PA designs with high mismatch and technology-independent large-signal device models

Simpson, Gary M.; Horn, Jason; Gunyan, D.; Root, David E.

doi:10.1109/arftg.2008.4804301

Cited by 77 publications

(55 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…X-parameters measured by NVNAs are being increasingly used to provide device models with high accuracy [2]. Because a transistor, especially a power transistor, will not usually be used in an environment nearly matched to 50 ohms, load-dependent Xparameters provide the appropriate foundation for general use [3], [6]. In this case, the NVNA is used together with a loadtuner presenting impedances that can be varied across the Smith Chart.…”

Section: Load-dependent X-parameter Device Modelsmentioning

confidence: 99%

Device modeling with NVNAs and X-parameters

Root

Horn

et al. 2010

2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits

View full text Add to dashboard Cite

This paper reviews and contrasts two complementary device modeling approaches based on data readily obtainable from a nonlinear vector network analyzer (NVNA) [1]. The first approach extends the application of waveform data to improve the characterization, parameter extraction, and validation methodologies for "compact" transistor models. NVNA data is used to train artificial neural network -based constitutive relations depending on multiple coupled dynamic variables, including temperature and trap states for an advanced compact model suitable for GaAs and GaN transistors. The second approach is based on loaddependent X-parameters* [2], [3], [5], [6], measured using an output tuner working with the NVNA. It is demonstrated that Xparameters measured versus load at the fundamental frequency predict well the independent effects of harmonic load tuning on a 10W GaN packaged transistor without having to independently control harmonic loads during characterization. A comparison of the respective merits of the two approaches is presented.

show abstract

Section: Load-dependent X-parameter Device Modelsmentioning

confidence: 99%

Device modeling with NVNAs and X-parameters

Root

Horn

et al. 2010

2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits

View full text Add to dashboard Cite

show abstract

“…X-parameters include harmonics and intermodulation frequency components, and also the relationships between all those frequencies for a given drive amplitude and frequency, enabling the complete waveforms -including those corresponding to strongly compressed conditions -to be measured at the device terminals [3]. Recent advances allow X-Parameters to be taken with various bias settings and load impedances.…”

Section: Pulsed-bias X-parameter Modelmentioning

confidence: 99%

Pulsed-bias pulsed-RF harmonic load pull for Gallium Nitride (GaN) and wide band-gap (WBG) devices

Dudkiewicz¹

2009

2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems

View full text Add to dashboard Cite

For the first time ever, a commercially available pulsed-bias pulsed-RF harmonic load pull system is being offered for high power and wide band-gap devices. Pulsing DC bias in conjunction with pulsing RF reduces slow (long-term) memory effects by minimizing self-heating and trapping, giving a more realistic observance of transistor operating conditions. IV, SParameter and Load Pull measurements taken under pulsed-bias pulsed-RF conditions give more accurate and meaningful results for high-power pulsed applications.

show abstract

“…Bild 7 zeigt einen Vergleich der simulierten Ergebnisse von lastabhängigen X-Parametern mit unabhängigen Load-Pull-Messungen [5].…”

Section: Lastabhängige X-parameterunclassified

X-Parameter: Das neue Paradigma zur Beschreibung nichtlinearer HF- und Mikrowellenbauelemente

Root¹,

Horn

Betts

et al. 2010

Tm - Technisches Messen

Self Cite

View full text Add to dashboard Cite

Zusammenfassung Zur Beschreibung nichtlinearer hochfrequenter Bauelemente wie Mischer oder Verstärker reichen herkömmliche Größen wie S-Parameter nicht aus. Wir zeigen, wie sich das Großsignalverhalten solcher Bauelemente, die Arbeitspunktabhängigkeit ihrer Eigenschaften und ihre Erzeugung neuer Frequenzanteile mit Hilfe so-genannter X-Parameter wiedergeben lassen. Das Verfahren wird an mehreren Beispielen demonstriert.Summary Non-linear RF devices such as mixers or amplifiers cannot be described in sufficient detail by common quantities such as S-parameters. We show how the largesignal characteristics of such devices, the influence of the operating point on their characteristics, and the generation of new frequency components can be modeled by the so-called X-parameters. The approach is demonstrated by way of several examples.

show abstract

Load-pull + NVNA = enhanced X-parameters for PA designs with high mismatch and technology-independent large-signal device models

Cited by 77 publications

References 4 publications

Device modeling with NVNAs and X-parameters

Device modeling with NVNAs and X-parameters

Pulsed-bias pulsed-RF harmonic load pull for Gallium Nitride (GaN) and wide band-gap (WBG) devices

X-Parameter: Das neue Paradigma zur Beschreibung nichtlinearer HF- und Mikrowellenbauelemente

Contact Info

Product

Resources

About