2013
DOI: 10.1186/1556-276x-8-155
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Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching

Abstract: We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperat… Show more

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Cited by 42 publications
(22 citation statements)
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References 27 publications
(26 reference statements)
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“…A metal film de-wetting process was reported as a lithography-free method to fabricate Si nanowires by MacEtch in liquid solution of HF and H 2 O 2 . 42 We used the de-wetting of the Pt nanopattern to produce a simple etching pattern to fabricate Si nanowires with a section size in the range of 10 to 100 nm by MacEtch in the gas phase. The use of an interconnected pattern has been demonstrated to effectively reduce the off-vertical catalyst movement.…”
Section: Pt Catalyst Pattern For Nanowire Fabricationmentioning
confidence: 99%
“…A metal film de-wetting process was reported as a lithography-free method to fabricate Si nanowires by MacEtch in liquid solution of HF and H 2 O 2 . 42 We used the de-wetting of the Pt nanopattern to produce a simple etching pattern to fabricate Si nanowires with a section size in the range of 10 to 100 nm by MacEtch in the gas phase. The use of an interconnected pattern has been demonstrated to effectively reduce the off-vertical catalyst movement.…”
Section: Pt Catalyst Pattern For Nanowire Fabricationmentioning
confidence: 99%
“…It has been shown that the etching rate of Si using the HF/AgNO 3 method increases with increasing AgNO 3 concentration, etching time [99], and temperature [100].…”
Section: Etching Rates Of Si Nws During Mac Etchingmentioning
confidence: 99%
“…Many studies have implemented MacEtch to improve the optoelectronic device efficiency by lowering the reflectance. [ 19–23,29–31 ] Conventionally, antireflective structures fabrication process with MacEtch contains photolithography. To simplify the process, alternative lithography methods such as metal agglomeration, nanosphere lithography, and anodic aluminum oxide were applied.…”
Section: Introductionmentioning
confidence: 99%