Lithography-Free Fabrication of Core–Shell GaAs Nanowire Tunnel Diodes

Izadi-Darbandi, Ali; Kavanagh, K. L.; Watkins, Simon P.

doi:10.1021/acs.nanolett.5b01795

Cited by 14 publications

(23 citation statements)

References 19 publications

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“…Semiconductor nanowires (NWs) have been intensively studied over the past few years because of their great potential in microelectronics, − photonics, − life science, , energy harvesting based on NWs solar cells, , or as nanogenerators. , Recently, core/shell NW heterostructures have attracted much attention due to their enhanced or original physical properties coming from carrier confinement, , high specific surface area or due to the coupling of the physical properties from the core and the shell. − Although most of the published works on core/shell NWs concern semiconductors of the same family, integration of heterogeneous crystalline materials such as silicon, , silicide or metals on GaAs NWs has been recently achieved opening the way to the fabrication of original devices. Owing to their wide-ranging properties, that are complementary to those of semiconductors, functional oxides with perovskite structure are a very promising shell material.…”

Section: Nanowire Growthmentioning

confidence: 99%

GaAs Core/SrTiO₃ Shell Nanowires Grown by Molecular Beam Epitaxy

et al. 2016

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We have studied the growth of a SrTiO3 shell on self-catalyzed GaAs nanowires grown by vapor-liquid-solid assisted molecular beam epitaxy on Si(111) substrates. To control the growth of the SrTiO3 shell, the GaAs nanowires were protected using an arsenic capping/decapping procedure in order to prevent uncontrolled oxidation and/or contamination of the nanowire facets. Reflection high energy electron diffraction, scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy were performed to determine the structural, chemical, and morphological properties of the heterostructured nanowires. Using adapted oxide growth conditions, it is shown that most of the perovskite structure SrTiO3 shell appears to be oriented with respect to the GaAs lattice. These results are promising for achieving one-dimensional epitaxial semiconductor core/functional oxide shell nanostructures.

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Section: Nanowire Growthmentioning

confidence: 99%

GaAs Core/SrTiO₃ Shell Nanowires Grown by Molecular Beam Epitaxy

et al. 2016

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“…For the same reason, the p-n junction curvature does not influence essentially on performance of tunnel core-shell diodes. In particular, this fact is corroborated by successful fabrication of a tunnel GaAs core-shell diode [11].…”

Section: Discussionmentioning

confidence: 72%

Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode

Borblik¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Dependences of the depletion widths in a radial core-shell p-n diode on the radius of metallurgical boundary of the p-n junction have been studied theoretically in detail. While the depletion width of the core increases with decreasing the radius, the depletion width of the shell, on the contrary, decreases. This is the consequence of cylindrical symmetry of the structure. And the total depletion width of the p-n junction can both increase and decrease depending on doping levels of the core and shell. A number of cases is presented where the dependence of depletion width of the p-n junction on its curvature influences on the diode current-voltage characteristics.

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“…Second, a low-resistance tunnel junction is required to connect the subcells, capable of handling the potentially large current densities in the nanowires due to the inherent optical concentration [190]. Tunnel junctions have been realized within nanowire homostructures [255,280,281] and heterostructures [282,283], as well as between planar Si and InAs or InGaAs nanowires [284,285].…”

Section: Beyond the Shockley-queisser Limitmentioning

confidence: 99%