Functional oxides of the perovskite family present a variety of physical properties (ferroelectricity, ferromagnetism, superconductivity, high Pockels coefficients, …) that make them very attractive for applications in the micro-optoelectronic field. 1 These materials are classically used as thin layers grown on oxide substrates, mainly SrTiO 3 (STO). Important perspectives for the integration of new functionalities on silicon and other semiconductor platforms, and therefore for the fabrication of innovative devices combining the physical properties of functional oxides and semiconductors, are offered by the advances in epitaxy of ABO 3 perovskites on semiconductors using molecular beam epitaxy (MBE). From the material science point of view, STO/Si can be considered as a prototypical system to understand the impact of structural and chemical heterogeneity on crystal growth. Controlling the chemical reactions between the growing layer and the substrate is one of the main challenges related to the epitaxial growth of perovskite oxides on semiconductor and particularly STO on Si, as the interface between these materials has been predicted as thermodynamically instable. 2 This is to a certain extent made possible by using a Sr-based treatment of the Si surface, as evidenced since the very first studies of this system 3,4 , and popularized by McKee et al. 5 Such procedure or its

The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response. Nevertheless, their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO3+δ as memristive material in a metal–insulator–metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition technique. We have developed three different growth strategies with which we are able to tune the oxygen content and Mn oxidation state moving from an orthorhombic to a rhombohedral structure for the active LaMnO3+δ material. Furthermore, a good resistive switching response has been obtained for LaMnO3+δ-based devices fabricated using optimized growth strategies.