Proceedings of the Great Lakes Symposium on VLSI 2012
DOI: 10.1145/2206781.2206818
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Lithography-aware layout compaction

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Cited by 3 publications
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“…A modern standard cell is designed through repeated layout modification, retargeting and optical proximity correction (OPC), and verification through lithography simulations [4], [5]; this process assures no intracell lithography defect. Potential intercell defect, which may arise near the cell boundary when two cells are placed adjacent, is avoided by embedding extra space both at left and right ends of a cell, called intercell margin (or simply margin) [6]- [8].…”
mentioning
confidence: 99%
“…A modern standard cell is designed through repeated layout modification, retargeting and optical proximity correction (OPC), and verification through lithography simulations [4], [5]; this process assures no intracell lithography defect. Potential intercell defect, which may arise near the cell boundary when two cells are placed adjacent, is avoided by embedding extra space both at left and right ends of a cell, called intercell margin (or simply margin) [6]- [8].…”
mentioning
confidence: 99%