Lithography at EUV wavelengths

Tallents, G. J.; Wagenaars, E.; Pert, G.J.

doi:10.1038/nphoton.2010.277

Cited by 162 publications

(130 citation statements)

References 3 publications

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“…Current information technologies rely on growth and processing techniques that allow the fabrication of two-dimensional nanostructures [1]. Currently, this involves the exposure of a photoresist to light through a mask to generate a nanoscale pattern, which is subsequently transferred onto another material via deposition or etching processes [1].…”

Section: Introductionmentioning

confidence: 99%

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Two-photon lithography for 3D magnetic nanostructure fabrication

et al. 2017

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Ferromagnetic materials have been utilized as recording media in data storage devices for many decades. The confinement of a material to a two-dimensional plane is a significant bottleneck in achieving ultra-high recording densities, and this has led to the proposition of three-dimensional (3D) racetrack memories that utilize domain wall propagation along the nanowires. However, the fabrication of 3D magnetic nanostructures of complex geometries is highly challenging and is not easily achieved with standard lithography techniques. Here, we demonstrate a new approach to construct 3D magnetic nanostructures of complex geometries using a combination of two-photon lithography and electrochemical deposition. The magnetic properties are found to be intimately related to the 3D geometry of the structure, and magnetic imaging experiments provide evidence of domain wall pinning at the 3D nanostructured junction.

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Section: Introductionmentioning

confidence: 99%

“…Currently, this involves the exposure of a photoresist to light through a mask to generate a nanoscale pattern, which is subsequently transferred onto another material via deposition or etching processes [1].…”

Section: Introductionmentioning

confidence: 99%

Two-photon lithography for 3D magnetic nanostructure fabrication

et al. 2017

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“…These studies have shown that plasmas containing tin, where transitions of the type 4p 6 4d n -4p 5 4d n+1 + 4d n-1 4f overlap in ion stages from Sn 9+ -Sn 13+ to form an unresolved transition array (UTA) centered near 13.5 nm are the strongest emitters at this wavelength. To keep pace with Moore's law, research on shorter wavelength EUV sources has already begun [3][4][5][6][7][8].…”

mentioning

confidence: 99%

“…Switching to a shorter wavelength of around 6.5−6.7 nm while maintaining or increasing throughput in the lithography system would improve resolution by a further factor of two [3]. The possibility of a new source wavelength of 6.x nm has emerged due to progress in the fabrication of B 4 C (La/B 4 C or Mo/B 4 C) multilayers with a reflectivity of ~ 40 % in a 0.06 nm bandwidth near 6.7 nm [9] whose maximum theoretical reflectivity is close to 70% [10].…”

mentioning

confidence: 99%

“…Following the earliest studies on extreme ultraviolet (EUV) emission from laser produced plasmas of elements with 62≤Z≤74, it is evident that both Gd and Tb ions have 4p 6 4d n -4p 5 4d n+1 + 4d n-1 4f transitions near this wavelength and emit an intense unresolved transition array (UTA) [11]. Recently, the suitability of Nd:yttrium-aluminum-garnet (Nd:YAG) laser-produced plasma (LPP) EUV sources based on Gd and Tb has been demonstrated for high power operation [3,7]. In order to achieve higher conversion efficiency (CE) from laser energy to EUV emission energy and spectral purity, the effects of optical thickness were evaluated by changing the laser wavelengths to change the plasma density and opacity [8].…”

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confidence: 99%

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Gd plasma source modeling at 6.7 nm for future lithography

Dunne

Higashiguchi

et al. 2011

Applied Physics Letters

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Plasmas containing gadolinium have been proposed as sources for next generation lithography at 6.x nm. To determine the optimum plasma conditions, atomic structure calculations have been performed for Gd11+ to Gd27+ ions which showed that n = 4 − n = 4 resonance transitions overlap in the 6.5–7.0 nm region. Plasma modeling calculations, assuming collisional-radiative equilibrium, predict that the optimum temperature for an optically thin plasma is close to 110 eV and that maximum intensity occurs at 6.76 nm under these conditions. The close agreement between simulated and experimental spectra from laser and discharge produced plasmas indicates the validity of our approach.

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Rational and Facile Construction of 3D Annular Nanostructures with Tunable Layers by Exploiting the Diffraction and Interference of Light

Choe

Park

You

2016

Adv Funct Materials

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This paper reports a rational and facile approach to fabricating arrays of 3D annular nanostructures with tunable layers by utilizing the diffraction and interference of UV light. Based on discretized Fresnel bright spots and standing waves formed within a photoresist fi lm, the structures with nanoscale features are realized using simple, conventional photolithography. The 3D annular nanostructures are produced in arrays of single-, double-, and triple-layered ring structures with the height of single layer on a 100 nm scale. The structural formation process and features of the nanostructures are analyzed and explained through 3D modeling that integrates the effects of both UV exposure dose and chemical kinetics. The approach to generating 3D annular nanostructures with tunable layers and discrete heights can be adapted for various applications that require the 3D structures fabricated over a large area with high throughput.

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Lithography at EUV wavelengths

Cited by 162 publications

References 3 publications

Two-photon lithography for 3D magnetic nanostructure fabrication

Two-photon lithography for 3D magnetic nanostructure fabrication

Gd plasma source modeling at 6.7 nm for future lithography

Rational and Facile Construction of 3D Annular Nanostructures with Tunable Layers by Exploiting the Diffraction and Interference of Light

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