Lithium Niobate Thin Film Based A<sub>1</sub> Mode Resonators with Frequency up to 16 Ghz and Electromechanical Coupling Factor Near 35%

Su, Rongxuan; Yu, Zhenyi; Fu, Sulei; Xu, Huiping; Zhang, Shuai; Liu, Peisen; Guo, Yu; Song, Cheng; Zeng, Fei; Pan, Feng

doi:10.1109/mems49605.2023.10052269

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…By local thinning of the LiNbO 3 thin films, high-frequency and large-bandwidth A1 filters can be conveniently designed [ 37 , 38 ]. With the reduction of LiNbO 3 thickness to below 200 nm, A1 filters are expected to operate at frequencies above 10 GHz while maintaining the relative bandwidth [ 39 ].…”

Section: Introductionmentioning

confidence: 99%

Through-Holes Design for Ideal LiNbO3 A1 Resonators

Hao

Qin

et al. 2023

Micromachines

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This paper proposes a method to realize ideal lithium niobate (LiNbO3) A1 resonators. By introducing subwavelength through-holes between the interdigital transducer (IDT) electrodes on the LiNbO3 surface, all unfavorable spurious modes of the resonators can be suppressed completely. It is convenient and valid for various IDT electrode parameters and different LiNbO3 thicknesses. Also, this method does not require additional device fabrication steps. At the same time, these through-holes can greatly reduce the suspended area of the LiNbO3 thin film, thus significantly improving the design flexibility, compactness, mechanical stability, temperature stability, and power tolerance of the resonators (and subsequent filters). It is expected to become an important means to promote the practical application of LiNbO3 A1 filters and even all Lamb waves filters.

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Section: Introductionmentioning

confidence: 99%

Through-Holes Design for Ideal LiNbO3 A1 Resonators

Hao

Qin

et al. 2023

Micromachines

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“…With the arrival of Fifth Generation (5G) mobile communication, traditional acoustic resonators, mainly surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, face higher technical challenges. The frequency of SAW resonators is limited by the accuracy of lithography, making it difficult to meet high-frequency application scenarios above 3 GHz [ 6 , 7 , 8 , 9 , 10 , 11 ]. In contrast, the frequency of BAW resonators is determined by the AlN piezoelectric film thickness, enabling higher frequencies to be achieved by controlling the film thickness, but it still cannot meet the demand for a broad bandwidth in 5G mobile communication because of the limited electromechanical coupling coefficient ( K 2 ) of AlN [ 12 , 13 , 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

Partially Etched Piezoelectric Film Filled with SiO2 Structure Applied to A1 Mode Resonators for Transverse Modes Suppression

Yu,

Guo,

et al. 2023

Micromachines

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With the arrival of the Fifth Generation (5G) communication era, there has been an urgent demand for acoustic filters with a high frequency and ultrawide bandwidth used in radio-frequency (RF) front-ends filtering and signal processing. First-order antisymmetric (A1) lamb mode resonators based on LiNbO3 film have attracted wide attention due to their scalable, high operating frequency and large electromechanical coupling coefficients (K2), making them promising candidates for sub-6 GHz wideband filters. However, A1 mode resonators suffer from the occurrence of transverse modes, which should be addressed to make these devices suitable for applications. In this work, theoretical analysis is performed by finite element method (FEM), and the admittance characteristics of an A1 mode resonator and displacement of transverse modes near the resonant frequency (fr) are investigated. We propose a novel Dielectric-Embedded Piston Mode (DEPM) structure, achieved by partially etching a piezoelectric film filled with SiO2, which can almost suppress the transverse modes between the resonant frequency (fr) and anti-resonant frequency (fa) when applied on ZY-cut LiNbO3-based A1 mode resonators. This indicates that compared with Broadband Piston Mode (BPM), Filled-broadband Piston Mode (FPM) and standard structures, the DEPM structure is superior. Furthermore, the design parameters of the resonator are optimized by adjusting the width, depth and filled materials in the etched window of the DEPM structure to obtain a better suppression of transverse modes. The optimized A1 mode resonator using a DEPM structure exhibits a transverse-free response with a high fr of 3.22 GHz and a large K2 of ~30%, which promotes the application of A1 mode devices for use in 5G RF front-ends.

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High-Frequency Magnetoelectric Antenna by Acoustic Excitation for 5G Communication

Ma,

Chen,

et al. 2024

Antennas Wirel. Propag. Lett.

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Lithium Niobate Thin Film Based A₁ Mode Resonators with Frequency up to 16 Ghz and Electromechanical Coupling Factor Near 35%

Cited by 4 publications

References 19 publications

Through-Holes Design for Ideal LiNbO3 A1 Resonators

Through-Holes Design for Ideal LiNbO3 A1 Resonators

Partially Etched Piezoelectric Film Filled with SiO2 Structure Applied to A1 Mode Resonators for Transverse Modes Suppression

High-Frequency Magnetoelectric Antenna by Acoustic Excitation for 5G Communication

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Lithium Niobate Thin Film Based A1 Mode Resonators with Frequency up to 16 Ghz and Electromechanical Coupling Factor Near 35%

Cited by 4 publications

References 19 publications

Through-Holes Design for Ideal LiNbO3 A1 Resonators

Through-Holes Design for Ideal LiNbO3 A1 Resonators

Partially Etched Piezoelectric Film Filled with SiO2 Structure Applied to A1 Mode Resonators for Transverse Modes Suppression

High-Frequency Magnetoelectric Antenna by Acoustic Excitation for 5G Communication

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Product

Resources

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Lithium Niobate Thin Film Based A₁ Mode Resonators with Frequency up to 16 Ghz and Electromechanical Coupling Factor Near 35%