Lithium niobate modulators on silicon beyond 20 GHz

Rao, Ashutosh; Patil, Aniket; Rabiei, Payam; DeSalvo, Richard; Paolella, A.; Fathpour, Sasan

doi:10.1109/oic.2016.7483021

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2016

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“…Different materials, such as tantalum pentoxide and chalcogenide glass have been previously developed for low loss [19][20][21] and used for rib loading the house-made LN thin films for demonstrating optical modulators [17,18]. Another index-matching alternative material with a wide transmission window used by us for modulators is silicon nitride (SiN) [22]. A schematic of the PPLN on Si device with SiN ribs presented in this work is shown in Fig.…”

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confidence: 99%

Second-harmonic generation in periodically-poled thin film lithium niobate wafer-bonded on silicon

et al. 2016

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Second-order optical nonlinear effects (second-harmonic and sum-frequency generation) are demonstrated in the telecommunication band by periodic poling of thin films of lithium niobate wafer-bonded on silicon substrates and rib-loaded with silicon nitride channels to attain ridge waveguide with cross-sections of ~ 2 µm 2 . The compactness of the waveguides results in efficient second-order nonlinear devices. A nonlinear conversion of 8% is obtained with a pulsed input in 4 mm long waveguides. The choice of silicon substrate makes the platform potentially compatible with silicon photonics, and therefore may pave the path towards on-chip nonlinear and quantum-optic applications. References and Links

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