Liquidus‐Solidus Isotherms in the In‐Ga‐As System

Pollack, M. A.; Nahory, R. E.; Deas, L. V.; Wonsidler, D. R.

doi:10.1149/1.2134061

Cited by 29 publications

(8 citation statements)

References 3 publications

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“…3. In the temperature range 800~176 much available data have been reported (11)(12)(13)(14)(15). Figure 4 shows the liquidus isotherms at 800 ~ 850 ~ and 900~ which were derived from the previously reported data.…”

Section: Experiments and Resultsmentioning

confidence: 90%

Substrate Orientation Dependence of the In‐Ga‐As Phase Diagram for Liquid Phase Epitaxial Growth of In0.53Ga0.47As on InP

Nakajima

Okazaki

1985

J. Electrochem. Soc.

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The liquidus isotherms of the In‐Ga‐As system were determined at 600° and 700°C by the improved seed dissolution technique. From the results of the liquidus isotherms and the lattice‐constant measurements, the substrate orientation dependence of solution compositions to grow lattice‐matched In0.53Ga0.47normalAs layers on the (100), (111)A, and (111)B normalInP substrates by liquid phase epitaxy (LPE) was exactly obtained in the temperature range 600°–790°C. The solution compositions of Ga for the (111)A and (111)B faces are always larger than those for the (100) face over the entire temperature range 600°–790°C. The solution compositions of As for the (111)A and (111)B faces are always smaller than those for the (100) face over the entire temperature range 600°–790°C. In order to study effects of the surface free energy on the In‐Ga‐As phase diagram which was determined by using the LPE method, the In‐Ga‐As phase diagram was calculated, for the first time, by adding the surface free energy to the chemical free energy of the In1−xGaxnormalAs solid phase. According to the calculated phase diagram, the composition of Ga in the solution to obtain the (111) oriented In0.53Ga0.47normalAs is smaller than the composition of Ga in the solution to obtain the (100)‐oriented In0.53Ga0.47normalAs . This tendency of the calculated results is contrary to the experimental results. That is to say, the difference in the surface free energy is not a main reason for the substrate orientation dependence of the In‐Ga‐As phase diagram.

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Section: Experiments and Resultsmentioning

confidence: 90%

Substrate Orientation Dependence of the In‐Ga‐As Phase Diagram for Liquid Phase Epitaxial Growth of In0.53Ga0.47As on InP

Nakajima

Okazaki

1985

J. Electrochem. Soc.

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“…LPE growth conditions for lattice matching.--The LPE growth conditions for obtaining lattice-matched In0.~aGa0.47As layers was determined prior to performing the SCC method. In1 xGaxAs ternary layers were grown from solutions with compositions on the liquidus isotherms at 790~ (9,10). (Ill)A-oriented InP single crystals were used as substrates.…”

Section: Experimental Procedures and Resultsmentioning

confidence: 99%

“…Manuscript submitted July 10, 1984; revised manuscript received Nov. 12, 1984. This was Paper 666 SOA presented at the New Orleans, Louisiana, Meeting of the Society, Oct. [7][8][9][10][11][12] 1984.…”

Section: Acknowledgmentsmentioning

confidence: 99%

A New Method to Supply Solute Elements into Growth Solutions: Demonstration by Liquid‐Phase Epitaxial Growth of

Nakajima

Yamazaki

1985

J. Electrochem. Soc.

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A controllable method to supply solute elements into growth solutions was developed by using a source currentcontrolled (SCC) method. A dc electric current was passed through a binary semiconductor compound used as the source material for solute elements. It was found that the source compound could be dissolved into even a saturated solution due to Peltier heating and Joule heating at the interface between the source compound and the solution, and that the composition of growing crystals could be controlled by the electric current passed through the source compound. The SCC method was demonstrated by the liquid-phase epitaxial growth of In,_~Ga~As on YnP. GaAs and InAs were used as source compounds.Good quality ePitaxial layers such as In0..~:~Ga0.47As and

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“…It has been reported by earlier investigators that the thermodynamic behaviour of solid solution may adequately be interpreted through an extended form of regular solution model (Pollack et al 1975). However, the corresponding liquidus compositions of higher order systems are poorly represented using a regular solution model (Pollack et al 1975). In the present investigation, therefore, a multiparameter function is adopted for interpretation of thermodynamic behaviour of the liquid alloys in the system.…”

Section: Introductionmentioning

confidence: 99%

“…The evaluation of the phase equilibria of the system is based on appropriate thermodynamic functions for the liquid alloys and the solid solutions involved in the system. It has been reported by earlier investigators that the thermodynamic behaviour of solid solution may adequately be interpreted through an extended form of regular solution model (Pollack et al 1975). However, the corresponding liquidus compositions of higher order systems are poorly represented using a regular solution model (Pollack et al 1975).…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic modelling of phase equilibria in Al-Ga-P-As system

Acharya

Hajra

2005

Bull Mater Sci

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Liquidus‐Solidus Isotherms in the In‐Ga‐As System

Abstract: Liquidus and solidus data are presented for the 800°, 850°, and 900°C isotherms, in the In‐rich corner of the In‐Ga‐As phase diagram. A simple solution model gives excellent agreement with the solidus data, but describes the liquidus more poorly than desired.

Cited by 29 publications

References 3 publications

Substrate Orientation Dependence of the In‐Ga‐As Phase Diagram for Liquid Phase Epitaxial Growth of In0.53Ga0.47As on InP

Substrate Orientation Dependence of the In‐Ga‐As Phase Diagram for Liquid Phase Epitaxial Growth of In0.53Ga0.47As on InP

A New Method to Supply Solute Elements into Growth Solutions: Demonstration by Liquid‐Phase Epitaxial Growth of

Thermodynamic modelling of phase equilibria in Al-Ga-P-As system

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