Measurements of lattice parameters and compositions for In1−xGaxAsyP1−y lattice matched to InP demonstrate the validity of Vegard’s law for this quaternary. The measured compositional dependence of the band gap shows a bowing parameter smaller than predicted from the previously measured band gaps of the four constituent ternaries.

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We report on low-dark-current IN0.53GA0.47As photodiodes in which generation-recombination current dominates diode leakage up to as high as 100 V. At higher voltages, tunneling currents become dominant, resulting in the soft breakdown characteristic widely observed in these materials. The dark current versus voltage characteristics have been fit to variations in current of over six orders of magnitude and a temperature range greater than 150 K using a theory which includes generation-recombination, tunneling, and shunt components.

A detailed study is presented of the Ga-As-Sb ternary phase diagram. Liquidus temperatures have been measured between 700 and 900 °C by direct observation of the solutions, and layers then grown epitaxially on GaAs substrates. The nonequilibrium effect of constitutional supercooling on the compositions of the grown layers is investigated. Solidus compositions, from layers slowly grown to minimize this effect, are used together with the liquidus data to fit a calculated phase diagram. These results lead to the conclusion that GaAs1−xSbx is a borderline case between miscible and immiscible solid solutions. An accurate determination of the ternary band gap has been made as a function of composition over the range 0⩽x⩽0.2. The room-temperature electrical properties of undoped, Te-doped (n-type), and Ge-doped (p-type) epilayers have also been determined.

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