Liquid phase epitaxy on zinc telluride

Widmer, Remo N.; Bortfeld, D. P.; Kleinknecht, H. P.

doi:10.1016/0022-0248(70)90072-2

Cited by 16 publications

(3 citation statements)

References 10 publications

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“…Defects in the shape of cones, platelets, protrusions, and various dendritic structures usually appear after etching. In practice, we have found the impurity concentrations in these defects to be below the detection level presently achieved by mass spectrometry and electron-probe microanalysis in agreement with Yanagawa (1) and Green (2). In this note we report new results on the chemical constituents of a number of chemical defects observed in processed silicon devices.…”

Section: Brief Co Nn Un Ca Onsupporting

confidence: 79%

Ohmic Contacts to Zinc Telluride

Baker

Milnes²

1972

J. Electrochem. Soc.

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Section: Brief Co Nn Un Ca Onsupporting

confidence: 79%

Ohmic Contacts to Zinc Telluride

Baker

Milnes²

1972

J. Electrochem. Soc.

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“…[3][4][5][6] Also, ZnTe thin films have been fabricated by epitaxial growth techniques. [7][8][9][10] However, little work has been reported on the synthesis of efficient luminescent ZnTe for powder phosphor applications. The photoluminescence of doped ZnTe has been widely reported, 3,4,[8][9][10][11][12][13][14][15][16][17][18] with effective dopants including oxygen, 3,[11][12][13][14][15][16][17] copper, 4,18 ytterbium, 9 arsenic, 10 etc.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Characterization of Oxygen Doped ZnTe for Powder Phosphor Application

et al. 2005

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The synthesis of efficient ZnTe powder phosphors is very difficult due to its high moisture sensitivity and chemical instability during processing. In this study, an efficient ZnTe:O powder phosphor for x-ray imaging application was successfully synthesized by vacuum firing ZnTe powder prepared from ZnTe bulk crystals ball-milled in an O 2 atmosphere. The phosphors were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, photoluminescence, and cathodoluminescence (CL) measurements and found to exhibit a luminescent efficiency three times that of ZnTe:O prepared by ZnO doping. The ZnTe:O samples exhibited a deep red emission centered at 680 nm and a CL decay time of 1.1s.

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“…La première méthode nécessite une double épitaxie et impose l'utilisation de solvants comme le zinc ou le tellure ou bien de solvants métalliques tels Bi, Pb, Sn, Ga, In [17] ou encore d'halogénures comme ZnCl2 [18J. Ces solvants présentent divers inconvénients : forte tension de vapeur (cas du Zn, Te, ZnCI2), introduction excessive du solvant dans le dépôt (cas des autres solvants).…”

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