Liquid phase epitaxial In<inf>1-x</inf>Ga<inf>x</inf>P<inf>1-z</inf>As<inf>z</inf>/GaAs<inf>1-y</inf>P<inf>y</inf>heterojunction lasers

Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers

“…Growth of ternary Ga x In 1Àx P with lattice constants mismatched to GaAs [5][6][7][8] has been extensively studied using liquid-phase epitaxy (LPE) since 1970s. The mismatch growth of GaInP typically results in the so-called ''composition-pulling or lattice-latching'' effect.…”

Investigation of the “composition-pulling or lattice-latching” effect in LPE

“…The existence of a so-called ''composition-pulling or lattice-latching'' effect was demonstrated in a number of articles [1][2][3][4] devoted to the LPE growth of GaInP solid solutions on GaAs substrates. It was found that layers of the same composition are grown from liquid solutions of different compositions.…”

“…[1][2][3][4][5][6][7] could be, possibly, related to the differences in the growth procedures used by each author. It is known that the chemical composition of an LPE layer depends on several technological parameters such as the composition of the liquid phase, the growth temperature, the degree of supercooling (DT) and even the cooling speed.…”

Studies on nucleation kinetics of In1−xGaxP/GaAs by Liquid-Phase Epitaxy

“…This alloy has also been used for fabrication of LED and laser material [9,10]. This effect was observed by many researchers [12][13][14][15][16][17][18] and is referred to as a composition-pulling effect or latticelatching effect. The lattice mismatch between the InGaP ternary alloy and GaAs substrate affects the crystalline qualities of the epilayers such as surface morphology, misfit dislocation density at the interface and emission intensity.…”