Liquid phase epitaxial growth of Zn and S doped GaAs

Ishii, Makoto; Tanaka, T.; Susaki, W.

doi:10.1016/0022-0248(79)90067-8

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…In our previous papers on GaAs doping with tellurium [12,13] and tin [13,14], we stated that changes in the impurity distribution coefficient are responsible for the changes of free charge carrier concentrations with growth temperature. With high volatility of zinc taken into account, the changes of hole concentration with epitaxy temperature which have been observed in the present work cannot be related quite correctly only to K Zn changes, since the graphite boat used in our experiments did not provide complete elimination of zinc evaporation from the solution [15]. For this reason, the question concerning temperature dependence of zinc distribution coefficient remains unclear and requires special experiments in a soldered ampoule.…”

Section: Resultsmentioning

confidence: 63%

“…For this reason, the question concerning temperature dependence of zinc distribution coefficient remains unclear and requires special experiments in a soldered ampoule. However, analysis of the results reported in [15] and the data obtained in our previous investigations [12,14,16] allows us to state that the temperature dependence of zinc distribution coefficient is different for epitaxy from gallium and bismuth solutions.…”

Section: Resultsmentioning

confidence: 89%

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New impurity-induced defect in heavily zinc-doped GaAs grown by liquid phase epitaxy

Шамирзаев

Журавлев

Yakusheva

et al. 1998

Semicond. Sci. Technol.

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The electrical and photoluminescence properties of heavily doped GaAs:Zn(100) layers grown by liquid phase epitaxy from gallium and bismuth solutions at various temperatures have been studied. It is shown that a new line at 1.35 eV appears in low-temperature photoluminescence spectra of the layers doped at a level over 10 19 cm −3 . It is found that this line is associated with a novel defect. The concentration of defects increases with the doping level proportionally to the concentration of free holes to the power 5.35 ± 0.1. The exponent is independent of the growth solution used (gallium or bismuth) and growth temperature. It has been found that the defect is a neutral complex consisting of native point defects of GaAs-an antisite defect of gallium in an arsenic site and two arsenic vacancies.

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Section: Resultsmentioning

confidence: 63%

Section: Resultsmentioning

confidence: 89%

New impurity-induced defect in heavily zinc-doped GaAs grown by liquid phase epitaxy

Шамирзаев

Журавлев

Yakusheva

et al. 1998

Semicond. Sci. Technol.

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Low compensation vapor phase epitaxial gallium arsenide

Colter

Reynolds

1983

Applied Physics Letters

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Vapor phase epitaxial gallium arsenide (GaAs) layers, with lower compensation ratios than any reported heretofore, have been reproducibly grown by the Ga/H2/AsCl3 method. One of these samples has been studied extensively by electrical measurements and shows an acceptor concentration of (2.0±0.7)×1013 cm−3, and a compensation rate of NA/ND =0.06±0.02. These numbers are supported by magnetophotothermal spectroscopy and photoluminescence measurements. The preparation involves growth on [211A] substrates, and a pregrowth bakeout of the Ga source, which results in a significantly lower Zn acceptor concentration in the layer. These results have important implications for various compensation mechanisms which have been proposed for GaAs.

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Liquid phase epitaxial growth of Zn and S doped GaAs

Cited by 2 publications

References 6 publications

New impurity-induced defect in heavily zinc-doped GaAs grown by liquid phase epitaxy

New impurity-induced defect in heavily zinc-doped GaAs grown by liquid phase epitaxy

Low compensation vapor phase epitaxial gallium arsenide

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