Abstract:The electrical and photoluminescence properties of heavily doped GaAs:Zn(100) layers grown by liquid phase epitaxy from gallium and bismuth solutions at various temperatures have been studied. It is shown that a new line at 1.35 eV appears in low-temperature photoluminescence spectra of the layers doped at a level over 10 19 cm −3 . It is found that this line is associated with a novel defect. The concentration of defects increases with the doping level proportionally to the concentration of free holes to the … Show more
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