Liquid phase epitaxial growth of GaAs from AuGeNi melts

Otsubo, M.; Kumabe, H.; Miki, Hidejiro

doi:10.1016/0038-1101(77)90101-0

Cited by 46 publications

(8 citation statements)

References 17 publications

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“…Fig. lle [20]. GaAs MESFET structure (e) and the details of the source region before (a) and after (b) a usual alloying process as well as before (c) and after (d) a TPE process obtained by OTSUBO et al [20] 5* .Acta Physica Academiae Sctentiarum tfungaricae 47,1979 This structure was an IMS system illustrated in Fig.…”

Section: Tpe In the Mosfet Technologymentioning

confidence: 91%

“…TPE was also used for making the drain and source islands of enhacement-type MOSFET devices [10,18,19]. GaAs MESFET structure (e) and the details of the source region before (a) and after (b) a usual alloying process as well as before (c) and after (d) a TPE process obtained by OTSUBO et al [20] 5* .Acta Physica Academiae Sctentiarum tfungaricae 47,1979 This structure was an IMS system illustrated in Fig. Then, the surface of GaAs and the Al layer on the top of the contact metal system were anodically oxidized.…”

Section: Tpe In the Mosfet Technologymentioning

confidence: 99%

“…GaAs MESFET structure (e) and the details of the source region before (a) and after (b) a usual alloying process as well as before (c) and after (d) a TPE process obtained by OTSUBO et al [20] 5* .Acta Physica Academiae Sctentiarum tfungaricae 47,1979 This structure was an IMS system illustrated in Fig. This results in an increase in source and drain resistances and gives devices with poorer microwave performances [20]. The alloying was performed in ah N 2 ambient at 600 ~ for 5 minutes.…”

Section: Tpe In the Mosfet Technologymentioning

confidence: 99%

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Thin phase epitaxy of III–V compound semiconductors

Sebestyen

1979

Acta Physica

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The main point of similarity between Solid Phase Epitaxy (SPE) and Thin Phase Epitaxy (TPE) developed by the author et al for making good ohmie contacts to low-doped n-type GaAs is that both have a thin (~1 q phase from which the epitaxy of a semiconductor material takes place. However, in contrast to solid phase epitaxy ah additional vapour, "beato" of solid phase is involved, too. The role of the additional phase is to prevent the loss of to supply ah excess of the volatile component(s), sueh as arsenic and phosphorous, during the epitaxial growth. The non-volatile component, sueh as Ga, Al of In, is deposited into the thin phase prior to TPE.The basie concepts and realizations of SPE and TPE are summarized. After reviewing the experimental results of TPE on making ohmic contacts to GaAs and InP the application of TPE in the GaAs MOSFET technology is describe& Then, related experiments and processes as well as alloying with short-duration, spike-type heat cycles by using furnaee heating or pulsed laser or electron beams are reviewed.*

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Section: Tpe In the Mosfet Technologymentioning

confidence: 91%

Section: Tpe In the Mosfet Technologymentioning

confidence: 99%

Section: Tpe In the Mosfet Technologymentioning

confidence: 99%

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Thin phase epitaxy of III–V compound semiconductors

Sebestyen

1979

Acta Physica

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“…Cross-sectional TEM observation was made at the contact edges. The edges which were sharply de®ned before contact annealing graded toward the base GaAs surface after annealing at 440 8C [53,76]. The typical distance of edge deterioration after annealing at 440 8C measured from the original lithographic boundary was about 0.19 mm.…”

Section: Roles Of B-auga Compound Layers On Thermal Stabilitymentioning

confidence: 98%

Development of refractory ohmic contact materials for gallium arsenide compound semiconductors

Murakami

2002

Science and Technology of Advanced Materials

239

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Recent strong demands for optoelectronic communication and portable telephones have encouraged engineers to develop optoelectronic devices, microwave devices, and high-speed devices using hetero-structural GaAs-based compound semiconductors. Although the GaAs crystal growth techniques had reached a level to control the compositional stoichiometry and crystal defects on a nearly atomic scale by the advanced techniques such as molecular beam epitaxy and metal organic chemical vapor deposition techniques, development of ohmic contact materials (which play a key role to inject external electric current from the metals to the semiconductors) was still on a trial-and-error basis. Our research efforts have been focused to develop low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance ohmic contact formation. In this paper, two typical examples of ohmic contact materials developed by forming ISL were given. The one was refractory NiGe-based ohmic contact material, which was developed by forming the homo-epitaxial ISL doped heavily with donors. This heavily doped ISL was discovered to be formed through the regrowth mechanism of GaAs layers at the NiGe/GaAs interfaces during annealing at elevated temperatures. To reduce the contact resistance further down to a value required by the device designers, an addition of small amounts of third elements to NiGe, which have strong binding energy with Ga, was found to be essential. These third elements contributed to increase the carrier concentration in ISL. The low resistance ohmic contact materials developed by forming homo-epitaxial ISL were Ni/M/Ge where a slash`/' denotes the deposition sequence and M is an extremely thin (,5 nm) layer of Au, Ag, Pd, Pt or In. The other was refractory In x Ga 12x As-based ohmic contact materials which were developed by forming the hetero-epitaxial ISL with low Schottky barrier to the contacting metals by growing the In x Ga 12x As layers on the GaAs substrate by sputter-depositing In x Ga 12x As targets and subsequently annealing at elevated temperatures. To reduce the contact resistance, it was found that this In x Ga 12x As (ISL) layer had to have In compositional gradient normal to the GaAs surface: the In concentration being rich at the metal/In x Ga 12x As interface and poor close to the In x Ga 12x As/GaAs interface. This concentration graded ISL reduced both the barrier heights at the metal/ISL and ISL/GaAs interfaces and reduced the contact resistance. The ohmic contact materials developed by forming heteroepitaxial ISL was In 0.7 Ga 0.3 As/Ni/WN 2 /W. These contact materials formed refractory compounds at the interfaces, which was also found to be essential to improve thermal stability of ohmic contacts used in the GaAs devices.

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“…The usual technique utilizes the alloying of a Au-Ge contact mixture into the GaAs surface (18)(19)(20)(21)(22). The Ge is believed to move into the GaAs surface thereby creating a highly doped region which forms a thin space charge layer through which electrons can tunnel.…”

Section: Purpose and Motivation For This Researchmentioning

confidence: 99%

Electron Device Contact Studies.

Wigen¹,

Thurston²

1982

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Liquid phase epitaxial growth of GaAs from AuGeNi melts

Cited by 46 publications

References 17 publications

Thin phase epitaxy of III–V compound semiconductors

Thin phase epitaxy of III–V compound semiconductors

Development of refractory ohmic contact materials for gallium arsenide compound semiconductors

Electron Device Contact Studies.

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