Thin phase epitaxy of III–V compound semiconductors

Abstract

The main point of similarity between Solid Phase Epitaxy (SPE) and Thin Phase Epitaxy (TPE) developed by the author et al for making good ohmie contacts to low-doped n-type GaAs is that both have a thin (~1 q phase from which the epitaxy of a semiconductor material takes place. However, in contrast to solid phase epitaxy ah additional vapour, "beato" of solid phase is involved, too. The role of the additional phase is to prevent the loss of to supply ah excess of the volatile component(s), sueh as arsenic and phosphorous, during the epitaxial growth. The non-volatile component, sueh as Ga, Al of In, is deposited into the thin phase prior to TPE.The basie concepts and realizations of SPE and TPE are summarized. After reviewing the experimental results of TPE on making ohmic contacts to GaAs and InP the application of TPE in the GaAs MOSFET technology is describe& Then, related experiments and processes as well as alloying with short-duration, spike-type heat cycles by using furnaee heating or pulsed laser or electron beams are reviewed.*