Liquid phase deposited silicon oxide with lower boron impurity grown on gallium nitride by temperature‐difference method

Abstract

This study investigates the growth of silicon oxide film on gallium nitride using hydrosilicofluoric acid and silica gel by the temperature‐difference liquid‐phase deposition. In the conventional liquid phase deposition, the boric acid is used as fluorine scavenger to prompt silicon oxide deposition and it also acts as an impurity in the oxide film. The better metal–oxide–semiconductor diode electrical characteristics can be obtained by the temperature‐difference method with lower boric acid incorporation and higher deposition rate. Compared with the leakage current density of the conventional and temperature‐difference methods, it can be much improved from 9.93 × 10–2 A/cm2 to 5.8 × 10–4 A/cm2 at +2 MV/cm and from 1.35 × 10–2 A/cm2 to 5.15 × 10–4 A/cm2 at –1 MV/cm. The effective oxide charges is improved from 3.88 × 1011 cm–2 to 2.27 × 1011 cm–2. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Liquid-Phase-Deposited Silicon Oxide Film as a Mask for Single-Sided Texturing of Monocrystalline Si Wafers

“…The chemical reactions for the growth of the silicon oxide film are simply proposed as follows normalH 2 SiF 6 + 2 normalH 2 normalO ↔ 6 HF + 2 SiO 2 , .25em ΔH > 0 normalH 3 BO 3 + 4 HF ↔ BF 4 − + normalH 3 normalO + + 2 normalH 2 normalO …”

“…Effect of Deposition Temperature. The chemical reactions for the growth of the silicon oxide film are simply proposed as follows22…”