2006
DOI: 10.1055/s-2006-934520
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Liquid-Crystalline Electronic Polymers for Transistors

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Cited by 165 publications
(253 citation statements)
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“…25,26 Some thiophene-based polymers have shown charge carrier mobilities ranging from 0.1 to 1 cm 2 V -1 s -1 , 27 values that are comparable to the benchmark standard of amorphous silicon. 28 Within this group of materials, thienothiophene-containing polymers have demonstrated some of the highest charge carrier mobilities. 29 The specific values are dependent on a number of factors, including the physical architecture of the device, 30 choice of source-drain electrodes and choice of dielectric material.…”
Section: Introductionmentioning
confidence: 99%
“…25,26 Some thiophene-based polymers have shown charge carrier mobilities ranging from 0.1 to 1 cm 2 V -1 s -1 , 27 values that are comparable to the benchmark standard of amorphous silicon. 28 Within this group of materials, thienothiophene-containing polymers have demonstrated some of the highest charge carrier mobilities. 29 The specific values are dependent on a number of factors, including the physical architecture of the device, 30 choice of source-drain electrodes and choice of dielectric material.…”
Section: Introductionmentioning
confidence: 99%
“…[15] [16] [17] Polymers, on the other hand, offer superior solution-processing qualities and produce uniform thin-films, but they are generally characterised by lower charge carrier mobility values. [17] [18] Blending small molecules with polymers has been shown to combine the high electrical performance traditionally associated with the small molecule with the superior filmforming attributes of the polymer, leading to semiconducting systems that combine the best of both worlds. [13] [14] [19] The 1 st generation blend was introduced in 2009 by Hamilton et al when they blended the small-molecule 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES ADT) with the semiconducting polymer poly(triarylamine) (PTAA), resulting in OFETs with mobilities of 2.4 cm 2 /Vs.…”
mentioning
confidence: 99%
“…The onsets of the oxidation potential values are 0.88, 0.75 and 0.87 V, respectively, for the polymers with a sequential increasing in the side chain length. The oxidation potential of the present set of polymers was found to be much higher than regioregular poly(3-hexylthiophene) (rr-P3HT) [16] and the poly(thieno[3,2-b]thiophene)s. [31] The relatively high oxidation potential of the polymers is due to the presence of the highly electron deficient thiazolothiazole ring. Because of the higher oxidation potential of the current set of polymers, they may not require any special inert conditions while fabricating EL devices.…”
Section: Electrochemistrymentioning
confidence: 99%