Liquid atomic layer deposition as emergent technology for the fabrication of thin films

Graniel, Octavio; Puigmartí‐Luis, Josep; Muñoz‐Rojas, David

doi:10.1039/d1dt00232e

Cited by 8 publications

(7 citation statements)

References 72 publications

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“…In some specific processes, the precursors are introduced in the chamber using direct injection systems (DLI), that make use of (little) amounts of solvents . Liquid ALD also uses (more) solvents to bring the precursors to the substrate surfaces . However, these two particular ALD techniques present other advantages, such as the broadening of the potential precursors that can be used, and the materials that can be deposited.…”

Section: Overview and Discussionmentioning

confidence: 99%

Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

et al. 2023

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Due to concerns on resources depletion, climate change, and overall pollution, the quest toward more sustainable processes is becoming crucial. Atomic layer deposition (ALD) is a versatile technology, allowing for the precise coating of challenging substrates with a nanometer control over thickness. Due to its unique ability to nanoengineer interfaces and surfaces, ALD is widely used in many applications. Although the ALD technique offers the potential to tackle environmental challenges, in particular, considerations regarding the sustainability of renewable energy devices urge for greater efficiency and lower carbon footprint. Indeed, the process itself has currently a consequential impact on the environment, which should ideally be reduced as the technique is implemented in a wider range of products and applications. This paper reviews the studies carried out on the assessment of the environmental impact of ALD and summarizes the main results reported in the literature. Next, the principles of green chemistry are discussed, considering the specificities of the ALD process. This work also suggests future pathways to reduce the ALD environmental impact; in particular, the optimization of the reactor and processing parameters, the use of high throughput processes such as spatial ALD (SALD), and the chemical design of greener precursors are proposed as efficient routes to improve ALD sustainability.

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Section: Overview and Discussionmentioning

confidence: 99%

Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

et al. 2023

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“…The precursors have to be highly reactive yet robust enough so that they do not decompose thermally. Further, the majority of ALD processes in the gas phase require vacuum conditions, which involve costly equipment. , These limitations can be overcome by transferring the ALD approach into the liquid phase, − the so-called solution ALD (sALD) or liquid ALD (LALD) process. The principle remains the same, namely, the ability to have self-limited growth behavior, even though the environment is different.…”

Section: Introductionmentioning

confidence: 99%

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Hilpert

Liao

Franz

et al. 2023

ACS Appl. Mater. Interfaces

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Solution-based atomic layer deposition (sALD) processes enable the preparation of thin films on nanostructured surfaces while controlling the film thickness down to a monolayer and preserving the homogeneity of the film. In sALD, a similar operation principle as in gasphase ALD is used, however, with a broader range of accessible materials and without requiring expensive vacuum equipment. In this work, a sALD process was developed to prepare CuSCN on a Si substrate using the precursors CuOAc and LiSCN. The film growth was studied by ex situ atomic force microscopy (AFM), analyzed by a neural network (NN) approach, ellipsometry, and a newly developed in situ infrared (IR) spectroscopy experiment in combination with density functional theory (DFT). In the self-limiting sALD process, CuSCN grows on top of an initially formed two-dimensional (2D) layer as three-dimensional spherical nanoparticles with an average size of ∼25 nm and a narrow particle size distribution. With increasing cycle number, the particle density increases and larger particles form via Ostwald ripening and coalescence. The film grows preferentially in the β-CuSCN phase. Additionally, a small fraction of the α-CuSCN phase and defect sites form.

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“…It is furthermore limited to precursors that are volatile in a suitable temperature range without decomposition. [5] ALD in solution (sALD) can overcome these limitations. In sALD, diluted solutions of the precursors in an inert solvent are brought into contact with the substrate, applying alternating flows of the different solution at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…It is furthermore limited to precursors that are volatile in a suitable temperature range without decomposition. [ 5 ]…”

Section: Introductionmentioning

confidence: 99%

Solid‐State NMR Spectroscopic Investigation of TiO₂ Grown on Silica Nanoparticles by Solution Atomic Layer Deposition

Ding

Mendez

Grass

et al. 2023

Adv Materials Inter

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Atomic layer deposition in solution (sALD) is just emerging as a technology for the preparation of thin films. Unlike ALD from the gas phase, it allows for mild reaction conditions in a solvent phase and at room temperature, thus decreasing the energy requirements of the process and widening the range of accessible precursor molecules. In this work, the deposition of thin films of titania on silica is investigated using titanium(IV) isopropoxide (TTIP) and water as precursors, which are alternatingly brought into contact with the support in a home‐built plug flow reactor. The mechanism of covalent grafting of the precursor to the surface, subsequent hydrolysis, and reaction to a layer of titania are investigated in detail using magic angle spinning (MAS) solid‐state nuclear magnetic resonance (NMR) spectroscopy. TTIP preferentially reacts with Q2 groups of condensed silica. 2D solid‐state NMR spectra allow to clearly show the successful grafting of this compound to the support by the appearance of a characteristic signal at −107 ppm, which is tentatively attributed to silicon nuclei in a SiOTi bond, and to reveal the presence of titanol groups on the emerging TiO2 film.

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Liquid atomic layer deposition as emergent technology for the fabrication of thin films

Abstract: Atomic layer deposition (ALD) is widely recognized as a unique chemical vapor deposition technique for the fabrication of thin films with a high conformality and precise thickness control down to...

Cited by 8 publications

References 72 publications

Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Solid‐State NMR Spectroscopic Investigation of TiO₂ Grown on Silica Nanoparticles by Solution Atomic Layer Deposition

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Liquid atomic layer deposition as emergent technology for the fabrication of thin films

Abstract: Atomic layer deposition (ALD) is widely recognized as a unique chemical vapor deposition technique for the fabrication of thin films with a high conformality and precise thickness control down to...

Cited by 8 publications

References 72 publications

Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

Assessing the Environmental Impact of Atomic Layer Deposition (ALD) Processes and Pathways to Lower It

Mechanistic Insight into Solution-Based Atomic Layer Deposition of CuSCN Provided by In Situ and Ex Situ Methods

Solid‐State NMR Spectroscopic Investigation of TiO2 Grown on Silica Nanoparticles by Solution Atomic Layer Deposition

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Solid‐State NMR Spectroscopic Investigation of TiO₂ Grown on Silica Nanoparticles by Solution Atomic Layer Deposition