Linearly Polarized Emission from an Embedded Quantum Dot Using Nanowire Morphology Control

Foster, Andrew P.; Bradley, J. P.; Gardner, Kirsty; Krysa, A. B.; Royall, B.; Skolnick, M. S.; Wilson, L. R.

doi:10.1021/nl503933n

Cited by 37 publications

(39 citation statements)

References 14 publications

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“…Next, it is beneficial to examine the catalyst-free anisotropically cross-sectioned GaAs NWs reported by Foster et al ., under these theoretical guidelines22. To realize such NWs, they have created asymmetric trench-like openings in a selective area growth mask; the trenches were aligned with various and type orientations.…”

Section: Resultsmentioning

confidence: 99%

“…Nanowire cross section shape and faceting is expected to influence its electrical, mechanical, optical and chemical properties18192021222324. In particular, Foster et al .…”

mentioning

confidence: 99%

“…In particular, Foster et al . have shown that the emission of InGaAs quantum wells embedded inside selective-area-grown anisotropically cross-sectioned GaAs NWs, exhibited linear polarization aligned with the long cross-section axis; basically, when one cross-sectional length-scale is too small to support an optical mode, the spatial degeneracy is lifted and the photoluminescence becomes linearly polarized22. This work is an excellent reference for catalyst free growth of anisotropic cross-sectioned NWs, and will be discussed below in further detail.…”

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confidence: 99%

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Catalyst shape engineering for anisotropic cross-sectioned nanowire growth

Calahorra

Kelrich

Cohen

et al. 2017

Sci Rep

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The ability to engineer material properties at the nanoscale is a crucial prerequisite for nanotechnology. Hereunder, we suggest and demonstrate a novel approach to realize non-hemispherically shaped nanowire catalysts, subsequently used to grow InP nanowires with a cross section anisotropy ratio of up to 1:1.8. Gold was deposited inside high aspect ratio nanotrenches in a 5 nm thick SiN x selective area mask; inside the growth chamber, upon heating to 455 °C, the thin gold stripes agglomerated, resulting in an ellipsoidal dome (hemiellipsoid). The initial shape of the catalyst was preserved during growth to realize asymmetrically cross-sectioned nanowires. Moreover, the crystalline nature of the nanowire side facets was found to depend on the nano-trench orientation atop the substrate, resulting in hexagonal or octagonal cross-sections when the nano-trenches are aligned or misaligned with the [110] orientation atop a [111]B substrate. These results establish the role of catalyst shape as a unique tool to engineer nanowire growth, potentially allowing further control over its physical properties.For the purpose of controlling and improving semiconducting nanowire (NW) devices for various applications 1-7 , an extensive research effort has been invested in studying NW growth; this was typically achieved by studying the different effects of user controlled parameters: (i) materials -including type and size of NW catalyst, the growth substrates and precursors, and (ii) by altering growth-system parameters, i.e., temperature and precursor flow [8][9][10][11][12][13][14][15][16][17] . In the following report we present a new paradigm, that of catalyst shape engineering, as a useful tool to control NW growth results; in particular, we show that by imposing a non-hemispherical shape to the catalyst-substrate interface, anisotropic cross-sectioned NWs may be grown -NWs with potentially new physical characteristics. Furthermore, we show that the combination of a non-hemispherical catalyst with different crystalline orientations of the long axis results in non-trivial side-faceting of the grown NWs. Nanowire cross section shape and faceting is expected to influence its electrical, mechanical, optical and chemical properties [18][19][20][21][22][23][24] . In particular, Foster et al. have shown that the emission of InGaAs quantum wells embedded inside selective-area-grown anisotropically cross-sectioned GaAs NWs, exhibited linear polarization aligned with the long cross-section axis; basically, when one cross-sectional length-scale is too small to support an optical mode, the spatial degeneracy is lifted and the photoluminescence becomes linearly polarized 22 . This work is an excellent reference for catalyst free growth of anisotropic cross-sectioned NWs, and will be discussed below in further detail. Similar results have been reported by Li et al., in regards to polarisation of laser emission from top-down fabricated GaN NWs 23 . In a different case, Mankin et al. have studied the reactivity of different facets of a VLS ...

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Section: Resultsmentioning

confidence: 99%

“…Nanowire cross section shape and faceting is expected to influence its electrical, mechanical, optical and chemical properties18192021222324. In particular, Foster et al .…”

mentioning

confidence: 99%

mentioning

confidence: 99%

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Catalyst shape engineering for anisotropic cross-sectioned nanowire growth

Calahorra

Kelrich

Cohen

et al. 2017

Sci Rep

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“…It can be observed that the growth direction of the L-shaped structures corresponds to one of the 〈11-2〉 directions, being in agreement with the positioning of the indium droplets at the corners between two {110} facets. Interestingly the 〈11-2〉 direction is also the growth direction for which the growth of membranes and nanowires with elongated cross sections is possible in the case of GaAs in patterned silicon dioxide on GaAs(111)B [41,42].…”

Section: Resultsmentioning

confidence: 99%

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

et al. 2016

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The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets are formed in situ on InAs(Sb) stems. Their position is modified to promote growth in the 〈11-2〉 or equivalent directions. We also show that indium droplets can be used for the fabrication of InSb insertions in InAsSb nanowires. Our results demonstrate that indium droplets can initiate growth of InAs nanostructures as well as provide added flexibility to nanowire growth, enabling the formation of kinks and heterostructures, and offer a new approach in the growth of defect-free crystals.S Online supplementary data available from stacks.iop.org/NANO/28/054001/mmedia

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“…Similar modifications of the coupling have already been demonstrated using symmetric pyramids [9], nanowires [10]- [12], ridge waveguide [13] or by resonant coupling to the electromagnetic field of micro-or nanocavity resonators [14]- [16]. In case of microcavities, the DOLP can be increased by tuning the emitter into resonance with one of the orthogonally polarized fundamental cavity modes [15].…”

Section: Introductionmentioning

confidence: 75%