Linearity of a Ka band SiGe receiver

Milner, Leigh E.; Hall, Leonard; Parker, Michael C.; McCulloch, MacCrae G.; Mahon, Simon J.

doi:10.1109/ausms.2014.7017354

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…Radios in the millimetre-wave band are under strong price pressure leading to examination of alternative semiconductor systems such as SiGe [1][2][3][4][5][6] to the standard GaAs [7][8][9] and to alternate architectures such as direct down-conversion. SiGe receivers are acknowledged to have lower cost potential in very large volume manufacturing but poorer noise figure and linearity.…”

Section: Introductionmentioning

confidence: 99%

Direct Down-Conversion 38 GHz GaAs and SiGe Receivers

Clement¹,

Milner

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et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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Direct down-conversion receivers at Ka band in GaAs and SiGe are measured and analysed with particular attention to linearity. The GaAs receiver is observed to have the superior overall linearity although SiGe has the better secondorder behaviour. The linearity is discussed with respect to the requirements of point-to-point radio and for the first time, to the authors' knowledge, an explanation is established for the effect of third-order distortion in the LNA on the second-order distortion from the complete receiver.

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Section: Introductionmentioning

confidence: 99%

Direct Down-Conversion 38 GHz GaAs and SiGe Receivers

Clement¹,

Milner

Convert³

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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A 1.5–40 GHz frequency modulated continuous wave radar receiver front-end

Sakalas

Joram

Ellinger

2021

Int. J. Microw. Wireless Technol.

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This study presents an ultra-wideband receiver front-end, designed for a reconfigurable frequency modulated continuous wave radar in a 130 nm SiGe BiCMOS technology. A variety of innovative circuit components and design techniques were employed to achieve the ultra-wide bandwidth, low noise figure (NF), good linearity, and circuit ruggedness to high input power levels. The designed front-end is capable of achieving 1.5–40 GHz bandwidth, 30 dB conversion gain, a double sideband NF of 6–10.7 dB, input return loss better than 7.5 dB and an input referred 1 dB compression point of −23 dBm. The front-end withstands continuous wave power levels of at least 25 and 20 dBm at low band and high band inputs respectively. At 3 V supply voltage, the DC power consumption amounts to 302 mW when the low band is active and 352 mW for the high band case, whereas the total IC size is $3.08\, {\rm nm{^2}}$ .

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