Linear programming of voltage-controlled memristors with an anti-serial memristor circuit

Abstract

The memristance variation of a single memristor with voltage input is generally a nonlinear function of time. Linearization of memristance variation about time is very important for the easiness of memristor programming. In this paper, a method utilizing an anti-serial architecture for linear programming is addressed. The anti-serial architecture is composed of two memristors with opposite polarities. It linearizes the variation of memristance by virtue of complimentary actions of two memristors. For programming a memristor, additional memristor with opposite polarity is employed. The linearization effect of weight programming of an anti-serial architecture is investigated and memristor bridge synapse which is built with two sets of anti-serial memristor architecture is taken as an application example of the proposed method.

Linearized Programming of Memristors for Artificial Neuro-Sensor Signal Processing

“…Several different types of nonlinear memristor models have been investigated [11,19,20]. One of them is the window model in which the state equation is multiplied by window function $F_p\left(w\right)$, namely $\frac{dw(t)}{dt}={\mu }_v\frac{R_{ON}}{D}i(t)F_p(w)$ where p is an integer parameter and $F_p\left(w\right)$ is defined by $F_p(w)=1-{\left(2\frac{w}{D}-1\right)}^{2p}$…”

“…It exhibits excellent features of both memory [3,4,5,6] and neuromorphic applications [2,7,8,9,10,11]. For memory applications, it is nonvolatile and has an extremely small size of a few nanometers [3,4,5].…”

“…Memristor is a new circuit element postulated by Leon Chua in 1971 [ 1 ] and fabricated recently by the Stanley Williams group [ 2 ] from Hewlett-Packard (HP). It exhibits excellent features of both memory [ 3 , 4 , 5 , 6 ] and neuromorphic applications [ 2 , 7 , 8 , 9 , 10 , 11 ]. For memory applications, it is nonvolatile and has an extremely small size of a few nanometers [ 3 , 4 , 5 ].…”