Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices

Walkey, D.J.; Smy, T.; MacElwee, T.W.; Maliepaard, M.C.

doi:10.1109/stherm.2001.915183

Cited by 7 publications

(9 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In contrast, the r th (T E ) characteristics of the GFM simulation show a dispersion with respect to P dis . A first approach for modeling this dispersion could be a linearized solution of the temperature dependence as presented in [23]. Since the thermal resistances extracted from measurements did not show a clear dispersion trend, (4) was applied for the analysis.…”

Section: Simulation Resultsmentioning

confidence: 99%

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Lehmann

Zimmermann

Pawlak

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A strategy for compact modeling the static thermal coupling between the emitter fingers of SiGe heterojunction bipolar transistors (SiGe-HBTs) is described. An extraction methodology that includes the nonlinear temperature dependence of the thermal conductivity is introduced and applied to suitable test structures. The experimental results are used for calibrating a 3-D numerical solution of the equation for heat conduction based on a Green's function approach. The latter can then be employed for generating thermal coupling networks for arbitrary transistor configurations.

show abstract

Section: Simulation Resultsmentioning

confidence: 99%

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Lehmann

Zimmermann

Pawlak

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…In addition, we consider an additional temperature-dependent parameter, namely the thermal conductance of silicon. It is reported that the thermal resistance (reciprocal of conductance) can be linearly approximated (Walkey et al 2001), thus the temperature-dependent conductance can be modeled as follows:…”

Section: Continuous Mode Modelmentioning

confidence: 99%

“…System parameters are summarized in Table 2. Coefficients for the temperature dependent thermal resistance (R 0 and R 1 ) are taken from Walkey et al (2001) and properly scaled to have the same thermal conductance as Yang et al (2010) at 300 K. Power parameters are borrowed from (Rai et al 2011) and scaled down to be proper according to (14). In all our experiments we start simulations with the initial temperature T (0) = T ∞ 0 = 319.31 K, calculated from parameters given in Table 2 and the observation time interval τ = 1.2 s, see Lemma 8.…”

Section: Benchmarks and Basic Configurationmentioning

confidence: 99%

Real-time worst-case temperature analysis with temperature-dependent parameters

et al. 2013

View full text Add to dashboard Cite

With the evolution of today's semiconductor technology, chip temperature increases rapidly mainly due to the growth in power density. Therefore, for modern embedded real-time systems it is crucial to estimate maximal temperatures early in the design in order to avoid burnout and to guarantee that the system can meet its real-time constraints. This paper provides answers to a fundamental question: What is the worst-case peak temperature of a real-time embedded system under all feasible scenarios of task arrivals? A novel thermal-aware analytic framework is proposed that combines a general event/resource model based on network and real-time calculus with system thermal equations. This analysis framework has the capability to handle a broad range of uncertainties in terms of task execution times, task invocation periods, jitter in task arrivals, and resource availability. The considered model takes both dynamic and leakage power as well as thermal dependent conductivity into consideration. Thorough simulation experiments validate the theoretical results. Keywords Real-time systems • Real-time analysis • Formal worst-cast temperature analysis • Temperature-dependent leakage power • Resource availability

show abstract

“…It varies roughly between 45 and 30 Wm -1 K -1 in the temperature range of 300 K to 400 K [6,7,14]. A linear approximation of the temperature dependence of the thermal conductivity, given by Eq.…”

Section: Non-linear Thermal Parametersmentioning

confidence: 99%

Lock-in thermo-electric detector arrays: thermal cross-talk prediction by non-linear model

Vandermeiren¹,

Stiens²,

Shkerdin³

et al. 2011

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Abstract.A non-linear numerical finite element method (FEM) model of a thermo-electric focal plane array (FPA) detector is presented here. Laser induced thermo-voltage profiles tend to spread out for small lock-in frequencies as the thermal diffusion length is inversely proportional to the square-root of the lock-in frequency. This leads to a frequency and spatial dependent thermal cross-talk level. In this paper we investigate the thermal cross-talk level quantitatively in function of spatial coordinates and lock-in frequency. Experimental data are provided at an optical power level of 1W. The impact of non-linear thermal parameters as the temperature dependence of the absorption coefficient, the thermal conductivity, the heat transfer coefficient and the Seebeck coefficient on the thermal profile and cross-talk level generated inside the detector material are studied in detail. Heat losses that are included in the model are conduction and laminar free convection. The relative importance of the above mentioned non-linear thermal parameters in terms of thermal cross-talk for steady-state solutions are discussed as well.Keywords: Thermo-electric detector, FEM model, non-linear thermal modeling IntroductionLock-in thermography greatly improves the sensitivity and the image resolution as compared to steady-state thermography [1]. The latter one suffers from high lateral heat spreading which results in a poor resolution. In our study, a similar lock-in technique is applied on Seebeck focal plane array's (FPA's) to improve the resolution (pixel density) and/or thermal cross-talk performance. In contrast to lock-in thermography, the thermal profile is probed by the Seebeck effect, by means of electrodes, instead of a contactless IR camera measurement. Lock-in thermo-electric FPA detectors can be used for laser beam profilometry [2]. Partial absorption of high power laser beams can result in a temperature distribution with local surface temperature maxima which exceeds 100 K above room temperature. In this temperature range, some non-linear thermal parameters (e.g. the thermal conductivity of GaAs) will change significantly with respect to its constant property-value. Hence, most relevant non-linear thermal parameters should be taken into account for accurate modeling. This paper is concerned with thermal cross-talk reduction in function of spatial coordinates and lock-in frequency. The impact of the temperature dependence of the absorption coefficient, the thermal conductivity, the heat transfer coefficient and the Seebeck coefficient, further referenced as non-linear thermal parameters, on the thermal cross-talk level in function of the applied lock-in frequency are investigated.

show abstract

Linear models for temperature and power dependence of thermal resistance in Si, InP and GaAs substrate devices

Cited by 7 publications

References 4 publications

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

Real-time worst-case temperature analysis with temperature-dependent parameters

Lock-in thermo-electric detector arrays: thermal cross-talk prediction by non-linear model

Contact Info

Product

Resources

About