Linear magnetoresistance on the topological surface

Wang, C. M.; Lei, X. L.

doi:10.1103/physrevb.86.035442

Cited by 80 publications

(68 citation statements)

References 40 publications

(75 reference statements)

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“…To explain the LMR observed in Bi 2 Se 3 nanosheets [70], Wang and Lei [83] derive a different model for the LMR using the balance-equation approach [84]. They found that for a 2D system with linear dispersion and a non-zero g-factor a LMR can arise.…”

Section: Quantum Vs Classical Effectmentioning

confidence: 99%

Magnetotransport and induced superconductivity in Bi based three‐dimensional topological insulators

Veldhorst

Snelder

Hoek

et al. 2012

Physica Rapid Research Ltrs

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Abstractmagnified imageThe surface of a three‐dimensional (3D) topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to review and analyze experimental observations with respect to the magnetotransport in Bi‐based 3D topological insulators, as well as the superconducting transport properties of hybrid structures consisting of superconductors and these topological insulators. The helical spin‐momentum coupling of the surface state electrons becomes visible in quantum corrections to the conductivity and magnetoresistance oscil‐lations. An analysis will be provided of the reported magnetoresistance, also in the presence of bulk conductivity shunts. Special attention is given to the large and linear magnetoresistance. Superconductivity can be induced in topological superconductors by means of the proximity effect. The induced supercurrents, Josephson effects and current–phase relations will be reviewed. These materials hold great potential in the field of spintronics and the route towards Majorana devices. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Quantum Vs Classical Effectmentioning

confidence: 99%

Magnetotransport and induced superconductivity in Bi based three‐dimensional topological insulators

Veldhorst

Snelder

Hoek

et al. 2012

Physica Rapid Research Ltrs

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“…Abrikosov proposed that the LMR is a quantum magnetoresistance of linearly dispersed electron systems, arising when all the electrons are filled in the first Landau level (LL), i.e., in the extreme quantum limit [12,13]. Wang and Lei proposed that the LMR can still arise when the LLs are smeared, if with a positive g factor [14]. There are also pictures involving no LLs.…”

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confidence: 99%

Large linear magnetoresistance in Dirac semimetalCd3As2with Fermi surfaces close to the Dirac points

et al. 2015

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We have investigated the magnetoresistive behavior of Dirac semi-metal Cd3As2 down to low temperatures and in high magnetic fields. A positive and linear magnetoresistance (LMR) as large as 3100% is observed in a magnetic field of 14 T, on high-quality single crystals of Cd3As2 with ultralow electron density and large Lande g factor. Such a large LMR occurs when the magnetic field is applied perpendicular to both the current and the (100) surface, and when the temperature is low such that the thermal energy is smaller than the Zeeman splitting energy. Tilting the magnetic field or raising the temperature all degrade the LMR, leading to a less pronounced quadratic behavior. We propose that the phenomenon of LMR is related to the peculiar field-induced shifting/distortion of the helical electrons' Fermi surfaces in momentum space.Compared with those negative magnetoresistive behaviors such as giant magnetoresistance [1] and colossal magnetoresistance [2] whose mechanisms have been well understood, positive large LMR was also reported in past decades but its mechanism is not fully clarified. Such behavior was found in highly disordered nonmagnetic narrow-band semiconductors such as Ag 2±δ Te and Ag 2±δ Se [3], in bismuth thin films [4], and in Dirac electron systems such as epitaxial graphene [5] and topological insulators-related materials [6][7][8][9][10]. Large LMR was also observed in InSb [11], a material with very small electron effective mass and very large electron Lande g factor. Several theories have been proposed to explain the phenomenon. Abrikosov proposed that the LMR is a quantum magnetoresistance of linearly dispersed electron systems, arising when all the electrons are filled in the first Landau level (LL), i.e., in the extreme quantum limit [12,13]. Wang and Lei proposed that the LMR can still arise when the LLs are smeared, if with a positive g factor [14]. There are also pictures involving no LLs. Parish and Littlewood explained the LMR in Ag 2±δ Te and Ag 2±δ Se by modeling the materials as a network due to disorder-induced mobility fluctuation [15]. So far the mechanism of LMR is still waiting to be clarified.In this work, we revisit the LMR issue by investigating the magnetoresistive behavior of Cd 3 As 2 single crystals. Cd 3 As 2 is predicted to be a three-dimensional (3D) Dirac semimetal [16], with linearly dispersed electron states in the bulk, and Fermi arcs at the surface which connect the bulk Dirac cones. The existence of 3D Dirac cones has been confirmed by angular resolved photoemission spectroscopy study [17]. And a LMR behavior has recently been observed on samples with Fermi level well above the Dirac point [9, 10], i.e., with carrier density of the order 10 18 cm −3 . Here, we report our investigations on single crystals of Cd 3 As 2 with a much lower carrier density, such that the Fermi surfaces are small spheres very close to the Dirac points in the momentum space, rather than near the Lifshitz transition (i.e., touching with each other). We observed a positive, very large an...

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“…14,15 In the last few years, the rapid expansion of the emerging field of topological insulators (TIs) has again stimulated intensive research on the MR in these topological materials with non-trivial zero-gap Dirac-like surface states. [16][17][18][19][20][21][22][23][24][25][26] After the initial discovery of a LMR together with the two-dimensional (2D) quantum oscillations of MR from the surface states, 16,17 many further experiments confirmed the existence of LMR in TI materials. [18][19][20][21][22][23][24][25][26] 18,22 Utilizing tilted magnetic field measurement, the linear MR of single crystalline TI in perpendicular field was attributed to the 2D gapless topological surface states and of quantum origin.…”

mentioning

confidence: 99%

“…[16][17][18][19][20][21][22][23][24][25][26] After the initial discovery of a LMR together with the two-dimensional (2D) quantum oscillations of MR from the surface states, 16,17 many further experiments confirmed the existence of LMR in TI materials. [18][19][20][21][22][23][24][25][26] 18,22 Utilizing tilted magnetic field measurement, the linear MR of single crystalline TI in perpendicular field was attributed to the 2D gapless topological surface states and of quantum origin. [17][18][19][20] On the other hand, other MR analysis suggested that charge inhomogeneity and conductivity fluctuation are also important, despite the sample being high quality film or individual single crystalline flake.…”

mentioning

confidence: 99%

Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi₂Te₃ Films

Wang

Yang

et al. 2014

Nano Lett.

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Linear magnetoresistance on the topological surface

Cited by 80 publications

References 40 publications

Magnetotransport and induced superconductivity in Bi based three‐dimensional topological insulators

Magnetotransport and induced superconductivity in Bi based three‐dimensional topological insulators

Large linear magnetoresistance in Dirac semimetalCd3As2with Fermi surfaces close to the Dirac points

Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi₂Te₃ Films

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Linear magnetoresistance on the topological surface

Cited by 80 publications

References 40 publications

Magnetotransport and induced superconductivity in Bi based three‐dimensional topological insulators

Magnetotransport and induced superconductivity in Bi based three‐dimensional topological insulators

Large linear magnetoresistance in Dirac semimetalCd3As2with Fermi surfaces close to the Dirac points

Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi2Te3 Films

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Granularity Controlled Nonsaturating Linear Magnetoresistance in Topological Insulator Bi₂Te₃ Films