Linear CMOS RF Power Amplifiers

Ruiz, Hector Solar; Pérez, Roc Berenguer

doi:10.1007/978-1-4614-8657-2

Cited by 8 publications

(1 citation statement)

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“…MOST with the ideal quadratic current equation of the strong inversion region, estimating an initial value of Vknee and adjusting the size of the transistor by means of electrical simulation with successive iterations. Finally, [21] develops an analytical model divided into different zones depending on whether the PA output voltage is clamped or not, or whether this voltage is above or below Vknee. However, none of above-listed works specify how the parameters of the MOST model equations are found neither have they specified which is the dependence of these parameters on MOST size and terminal voltages.…”

Section: Introductionmentioning

confidence: 99%

Normalized Nonlinear Semiempirical MOST Model Used in Monolithic RF Class A-to-C PAs

Fiorelli

Barabino

Silveira

et al. 2019

Circuits Syst Signal Process

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This paper presents a simple but accurate normalized non-linear largesignal semi-empirical MOS transistor model to be used in monolithic RF Class A-to-C PAs. MOS transistor characteristics, saved in look-up tables, are extracted for different PVT corners, allowing the study of the PA performance spread. Model accuracy is ratified by the excellent matching obtained when comparing data algebraically calculated with electrical simulations of hundreds of PAs, and with the measurement data of a fabricated 2.4 GHz PA.

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Section: Introductionmentioning

confidence: 99%

Normalized Nonlinear Semiempirical MOST Model Used in Monolithic RF Class A-to-C PAs

Fiorelli

Barabino

Silveira

et al. 2019

Circuits Syst Signal Process

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Design of High-Linearity Wideband Power Amplifiers

Río

Rezola

Sevillano

et al. 2018

Analog Circuits and Signal Processing

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Optimal Design of Low Power CMOS Power Amplifier Using Particle Swarm Optimization Technique

Manjula¹,

Selvathi²

2015

Wireless Pers Commun

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A low voltage 2.4 GHz CMOS power amplifier for wireless personal area network (WPAN) applications is presented in TSMC 0.13 μm CMOS process. It consists of driver and power amplifier stages which are connected in current reuse structure. The driver amplifier has push pull inverter configuration. The power amplifier is the common source amplifier. These two stages are biased in class AB mode. For optimizing out-of-band emissions, the proposed power amplifier is linearized by RF predistortion technique. For efficient power amplifier, the design parameters are needed to be optimized using particle swarm optimization technique. The optimized power amplifier achieves 0 dBm output power, 34.06 % PAE, 18 dB power gain at 2.4 GHz frequency. It consumes 2.95 mW power at a supply voltage of 1.2 V.

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Linear CMOS RF Power Amplifiers

Cited by 8 publications

References 0 publications

Normalized Nonlinear Semiempirical MOST Model Used in Monolithic RF Class A-to-C PAs

Normalized Nonlinear Semiempirical MOST Model Used in Monolithic RF Class A-to-C PAs

Design of High-Linearity Wideband Power Amplifiers

Optimal Design of Low Power CMOS Power Amplifier Using Particle Swarm Optimization Technique

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