Linear and nonlinear susceptibilities in GaN/Al x Ga1−x N quantum wire

Zeiri, N.; Bouazra, A.; Nasrallah, S. Abdi-Ben; Saïd, M.

doi:10.1088/1402-4896/ab5b45

Cited by 3 publications

(2 citation statements)

References 54 publications

(80 reference statements)

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“…In many quantum dot researches, the third-generation nitride semiconductor quantum dot materials, such as GaN and AlN, have a very broad application prospect in optoelectronic and optical detection devices (blue, green, and ultraviolet light), and high frequency and power laser devices due to their special properties such as wide band gap, high mobility, etc. [3][4][5][6] Generally speaking, nitride semiconductor materials are divided into wurtzite and zinc blende. The wurtzite and zinc blende have hexagonal and cubic structures respectively, and their properties are different due to different structures.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of core/shell spherical quantum dots*

Shi

Yan

2020

Chinese Phys. B

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In this study, the effects of quantum dot size on the binding energy, radiative lifetime, and optical absorption coefficient of exciton state in both GaN/Al x Ga1−x N core/shell and Al x Ga1−x N/GaN inverted core/shell quantum dot structures are studied. For the GaN/Al x Ga1−x N core/shell structure, the variation trend of binding energy is the same as that of radiation lifetime, both of which increase first and then decrease with the increase of core size. For Al x Ga1−x N/GaN inverted core/shell structure, the binding energy decreases first and then increases with core size increasing, and the trends of radiation lifetime varying with core size under different shell sizes are different. For both structures, when the photon energy is approximately equal to the binding energy, the peak value of the absorption coefficient appears, and there will be different peak shifts under different conditions.

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Section: Introductionmentioning

confidence: 99%

Optical properties of core/shell spherical quantum dots*

Shi

Yan

2020

Chinese Phys. B

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“…These external effects in a system such as hydrostatic pressure, electric or magnetic field, and continuous laser radiation changes the intersubband transitions [23]. A recent review of the literature on this topic shows that these effects are of increasing interest on optoelectronic properties of low dimensional systems [2,[26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Hydrostatic pressure and interlayer distance effects on non-linear optical proprieties in n-type double delta-doped GaAs quantum wells

2020

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Within the framework of the Thomas-Fermi theory, the electronic structure and the nonlinear optical properties in n-type GaAs double delta-doped quantum wells where determined. In particular, was studied the effects of the distance between the doping layers and the hydrostatic pressure on the absorption coefficient and the change in the refractive index. It was found that the interlayer distance has an important effect on potential geometry, while the pressure lowers the bottom of potential. It was found that the influence of the interlayer distance (hydrostatic pressure) generates a red-shift (blue-shift) on the absorption peak and the refractive index change node. The results indicate that the optoelectronic properties in small interlayer distances (25–50 Å) show a high sensitivity to the changes of hydrostatic pressure, whereas for distances larger than 100 Å the effects of hydrostatic pressure are unimportant for the 1-0 transition. On the far-infrared regime, the effects of these parameters can be applied to tuning the position and amplitude of the resonant optical signals.

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