Hydrostatic pressure and interlayer distance effects on non-linear optical proprieties in n-type double delta-doped GaAs quantum wells

Abstract

Within the framework of the Thomas-Fermi theory, the electronic structure and the nonlinear optical properties in n-type GaAs double delta-doped quantum wells where determined. In particular, was studied the effects of the distance between the doping layers and the hydrostatic pressure on the absorption coefficient and the change in the refractive index. It was found that the interlayer distance has an important effect on potential geometry, while the pressure lowers the bottom of potential. It was found that the influence of the interlayer distance (hydrostatic pressure) generates a red-shift (blue-shift) on the absorption peak and the refractive index change node. The results indicate that the optoelectronic properties in small interlayer distances (25–50 Å) show a high sensitivity to the changes of hydrostatic pressure, whereas for distances larger than 100 Å the effects of hydrostatic pressure are unimportant for the 1-0 transition. On the far-infrared regime, the effects of these parameters can be applied to tuning the position and amplitude of the resonant optical signals.

Nonlinear optical properties in n-type quadruple δ-doped GaAs quantum wells

“…The literature concentrates a lot of information on this material related to subband structure, electron or hole mobilities, and optoelectronic properties. [14,15,[20][21][22][23][24][25] On the other hand, lower number works have been conducted on delta-layers for Si, and this is due to the problems to incorporate dopants in a controlled process of MBE growth for Si. [26] Another important point is that, in δ -doped potential profiles cases, there are recent studies in nonlinear optical properties.…”

“…[26] Another important point is that, in δ -doped potential profiles cases, there are recent studies in nonlinear optical properties. [15,23,27,28] For instance, Durmuslar et al [20] determined the effects on the nonlinear optical rectification, second harmonic generation, and third harmonic generation of n-type asymmetric double delta-doped GaAs quantum well. In this work, the obtained results indicate that an electric field leads to optical red-shift on nonlinear coefficients while the magnetic field causes optical blue-shift.…”