Linear- and nonlinear-optical properties of GaN thin films

Miragliotta, Joseph A.; Wickenden, D. K.; Kistenmacher, Thomas J.; Bryden, Wayne A.

doi:10.1364/josab.10.001447

Cited by 106 publications

(51 citation statements)

References 19 publications

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“…GaN exhibits strong second-order nonlinearity [11][12][13][14], with a χ (2) coefficient of the same order as LiNbO 3 . Its outstanding electrical, thermal and optoelectronic properties have enabled a broad range of technological applications including high speed and high power electronics [15], blue/UV light emitting and laser diodes [16].…”

Section: Introductionmentioning

confidence: 99%

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Xiong¹,

Pernice²,

Ryu³

et al. 2011

Opt. Express

194

139

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Abstract:We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The χ (2) nonlinear susceptibility is measured to be as high as 16 ± 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of χ (2) enabled sum-/difference-frequency processes.

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Section: Introductionmentioning

confidence: 99%

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Xiong¹,

Pernice²,

Ryu³

et al. 2011

Opt. Express

194

139

View full text Add to dashboard Cite

show abstract

“…Further advantages of GaN include a high laser damage threshold and the ability to use standard 1μm pump lasers (OP GaAs has been restricted to 2μm sources [1]). In addition to these properties, GaN possesses a second order non-linear susceptibility which, although differing values have been reported in the literature, is generally thought to have a similar magnitude to that of PPLN [7][8][9][10]. …”

Section: Gallium Nitride As a Nlo Candidatementioning

confidence: 99%

“…In bulk, the SHG efficiency is too small to be practical [7]. However, SHG spectroscopy has been used to investigate the surface of GaN thin films grown on both Ga-and N-polar surfaces [13].…”

Section: Quasi Phase Matching In Gallium Nitridementioning

confidence: 99%

Development of Periodically Oriented Gallium Nitride for Non-linear Optics

Hite¹,

Twigg²,

Mastro³

et al. 2012

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Methods for growing periodically alternating polarities of GaN on GaN substrates have been developed. The resulting periodically oriented samples demonstrate feasibility of using this method to produce structures of utility in optical parametric generation. ©2012 Optical Society of AmericaOCIS codes: (190.4400) Nonlinear optics, materials; (160.6000) Semiconductor materials. References and links1. D. S. Hum and M. M. Fejer, "Quasi-phase matching," C. R. Phys. 8(2), 180-198 (2007). 2. L. Arizmendi, "Photonic applications of lithium niobate crystals," Phys. Status Solidi A 201(2), 253-283 (2004). Report Documentation PageForm Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number.

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“…GaN presents a wurtzite crystal structure without centre of inversion, thus leading to efficient second order nonlinear effects (Miragliotta et al, 1993). In addition, the wide transparency range, which extends form IR to the near UV, make this material extremely appealing from nonlinear optical point of view.…”

Section: Evaluation Of the Non-zero Elements Of The  (2) Tensor Compmentioning

confidence: 99%