Asia Communications and Photonics Conference 2012
DOI: 10.1364/acpc.2012.as1b.3
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Linear and Nonlinear Optical Absorption of on-chip Silicon-on-insulator Nanowires with Graphene

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Cited by 5 publications
(5 citation statements)
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“…In contrast, the carriers generated in the silicon layer would introduce some free carrier absorption (FCA) loss depending on the free carrier concentration. 28,29 For the present case, there is no FCA loss observed for the probe light propagating along the SOI nanowire without graphene when the pump light is "ON" with a power of 15 mW, indicating that the FCA loss in the silicon layer is negligible (which is consistent with the theoretical estimation) because the carrier concentration is low here. Since we have observed loss reduction (instead of loss increase) in the experiment as shown in Figure 2b, the OIT effect should not directly come from the variation of carrier concentration in the ARTICLE silicon layer.…”
Section: Resultssupporting
confidence: 88%
See 1 more Smart Citation
“…In contrast, the carriers generated in the silicon layer would introduce some free carrier absorption (FCA) loss depending on the free carrier concentration. 28,29 For the present case, there is no FCA loss observed for the probe light propagating along the SOI nanowire without graphene when the pump light is "ON" with a power of 15 mW, indicating that the FCA loss in the silicon layer is negligible (which is consistent with the theoretical estimation) because the carrier concentration is low here. Since we have observed loss reduction (instead of loss increase) in the experiment as shown in Figure 2b, the OIT effect should not directly come from the variation of carrier concentration in the ARTICLE silicon layer.…”
Section: Resultssupporting
confidence: 88%
“…A new ultrathin (∼1 Å) SiO 2 layer might be formed quickly afterward because of exposure in air. A large-size (about 1 cm × 1 cm) graphene sheet grown by chemical vapor deposition (CVD) is then wet-transferred onto the SOI chip, , without requiring any precise alignment. A dry-etching process with oxygen plasma is then applied to remove the graphene covering the regions including the 10 μm-wide grating couplers as well as their 200 μm-long adiabatic tapers.…”
Section: Methodsmentioning
confidence: 99%
“…3(b), including the resonant wavelengths of the SC-ADSMR before and after graphene transfer, the corresponding extinction ratio and the FWHM of the transmission spectra. Utilizing the analytical method, the LAC of the GSHW in our case has a mean value of 0.23 dB/µm, which is comparable to the results in literature [23,24].…”
Section: Fig 4 Scheme Of Thesc-adsmr With Patternedmonolayer Graphenesupporting
confidence: 87%
“…Broadband optical modulator [17,18], mode locked laser [19], broadband photodetectors [20,21], and enhanced parametric frequency conversion [22] have all been demonstrated utilizing graphene-silicon hybrid waveguides (GSHWs). Owing to its intrinsic physical properties, the linear absorption coefficients (LACs) of GSHWs range from 0.04dB/µm to 0.33 dB/µm [23,24],which are much larger than those of silicon waveguides [25]. The LACs of GSHWs are dependent on the quality of the transferred graphene and the waveguide configurations [26], thus are required to be optimized for practical applications.…”
mentioning
confidence: 99%
“…A monolayer graphene sheet, grown by chemical vapor deposition (CVD) method, is wet-transferred onto the whole SOI chip without any alignment. 26,27 A third EBL process followed by an oxygen plasma etching process is then utilized to pattern the graphene sheet forming the nano-heater as well as the connecting bridges that connect the nano-heater and the metal contacts. 26 As shown in Figure 1b, the graphene nano-heater has an annulus part on the micro-disk and two straight parts extending out of the micro-disk.…”
Section: Methodsmentioning
confidence: 99%