2016
DOI: 10.1364/oe.24.024105
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Enhanced linear absorption coefficient of in-plane monolayer graphene on a silicon microring resonator

Abstract: Abstract:We demonstrate that linear absorption coefficient (LAC)of a graphene-silicon hybrid waveguide (GSHW) is determined by the optical transmission spectra of a graphene coated symmetrically coupled add-drop silicon microring resonator (SC-ADSMR), of which the value is around 0.23 dB/µm. In contrast to the traditional cut-back method, the measured results aren't dependent on the coupling efficiency of the fiber tip and the waveguide. Moreover, precision evaluation of graphene coated silicon microring reson… Show more

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Cited by 36 publications
(22 citation statements)
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References 46 publications
(64 reference statements)
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“…The low‐power (W/O in Figure 3e) propagation loss of the uncoated waveguide and the waveguide with a monolayer of GO were ≈0.26 and ≈1.27 dB cm −1 , respectively, corresponding to an excess propagation loss of ≈1 dB cm −1 induced by the GO film. This is over two orders of magnitude lower than that of integrated waveguides coated with graphene, [ 54,55 ] indicating the low material absorption of GO and its strong potential for the realization of high‐performance nonlinear photonic devices. The propagation loss increased with the GO layer number—a combined result of mode overlap and several other possible effects such as increased scattering loss and absorption induced by imperfect contact between the multiple GO layers as well as interaction between the GO layers, as reported previously.…”
Section: Device Fabrication and Characterizationmentioning
confidence: 98%
“…The low‐power (W/O in Figure 3e) propagation loss of the uncoated waveguide and the waveguide with a monolayer of GO were ≈0.26 and ≈1.27 dB cm −1 , respectively, corresponding to an excess propagation loss of ≈1 dB cm −1 induced by the GO film. This is over two orders of magnitude lower than that of integrated waveguides coated with graphene, [ 54,55 ] indicating the low material absorption of GO and its strong potential for the realization of high‐performance nonlinear photonic devices. The propagation loss increased with the GO layer number—a combined result of mode overlap and several other possible effects such as increased scattering loss and absorption induced by imperfect contact between the multiple GO layers as well as interaction between the GO layers, as reported previously.…”
Section: Device Fabrication and Characterizationmentioning
confidence: 98%
“…Aside from the Kerr nonlinearity (n2, γ) and the nonlinear FOM (FOMeff), the other remaining key factor affecting nonlinear performance is the linear loss. As mentioned the loss of our hybrid waveguides is about 2 orders of magnitude lower than comparable devices integrated with graphene [48], and this played a key role for achieving high BFs in our SPM experiments.…”
Section: Fom Of the Hybrid Waveguidesmentioning
confidence: 70%
“…We employed lensed fibers to butt couple the CW light into and out of the SOI nanowires with inverse-taper couplers at both ends with a butt coupling loss of ~5 dB per facet. This is about 2 orders of magnitude smaller than SOI nanowires coated with graphene [48], indicating the low material absorption of GO and its strong potential for the implementation of high-performance nonlinear photonic devices. The propagation loss increased with GO layer number − a combined result of increased mode overlap and several other possible effects such as increased scattering loss and absorption induced by imperfect contact between the multiple GO layers as well as interaction between the GO layers, as reported previously [43,47].…”
Section: Linear Loss Measurementmentioning
confidence: 94%
“…[22][23][24] Among these materials, graphene, a single atom thick carbon sheet with atoms arranged in a hexagonal structure, was first studied for integrated optoelectronic devices due to its excellent optical and electrical properties. [25][26][27][28][29] A mono-graphene layer has a constant absorption of 2.3% over a wide wavelength range, from infrared to visible. Graphene also has a high carrier mobility (200 000 cm 2 V −1 s −1 at room temperature), which is about two orders of magnitude higher than that of silicon.…”
Section: Graphene On Siliconmentioning
confidence: 99%