Line-pattern collapse mitigation status for EUV at 32nm HP and below

Carcasi, Michael; Bassett, Derek W.; Printz, Wallace; Kawakami, Shinichiro; Miyata, Yuichiro

doi:10.1117/12.916310

Cited by 3 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Modeling of the collapse in photoresist structures has continued, with Chini and Amirfazli (9) deriving a formulation using a method similar to Tanaka et al (8), but also incorporating secondary effects such the bending of the feature changing the effective contact angle, and a rudimentary initial investigation of 3D effects. Yoshimoto et al (10) included plastic deformation of the photoresist into a model to predict the collapse of photoresist features, and Carcasi et al (11) looked at predicting photoresist pattern collapse with a model that accounted for the outer layer of photoresist becoming softer due to adsorption of the wetting liquid.…”

Section: Modeling Of Photoresist Structuresmentioning

confidence: 99%

(Invited) Capillary Pattern Collapse: Prediction and Prevention from Past to Future

Bassett

2019

ECS Trans.

View full text Add to dashboard Cite

Pattern collapse due to capillary forces continues to be a difficult issue in semiconductor cleaning and processing. This paper gives an overview of the history of research into this phenomenon, first looking at the basic 2D model for collapsing lines, then models for pillars, other shapes, and direct numerical simulations. It then discusses experimental methods to investigate pattern collapse, including structures of photoresist, high aspect ratio lines and pillars, MEMS, and the use of AFM to measure material properties. The paper then reviews methods used to prevent pattern collapse, from changing surface tension and contact angle to the elimination of surface tension entirely. Finally the paper discusses the future of pattern collapse, and what methods and techniques are likely to be used in the future to model, predict, and prevent the collapse of structures due to capillary forces.

show abstract

Section: Modeling Of Photoresist Structuresmentioning

confidence: 99%

(Invited) Capillary Pattern Collapse: Prediction and Prevention from Past to Future

Bassett

2019

ECS Trans.

View full text Add to dashboard Cite

show abstract

“…1 However, the photoresist (PR) for a shorter wavelength has to be thinner and softer with respect to the dry etch process because the shorter wavelength has a higher opacity and a lower depth of focus. A shorter wavelength for a scanner is needed to increase the resolution of photolithography.…”

Section: Introductionmentioning

confidence: 99%

Transistor gate line roughness formation and reduction in sub-30-nm gate patterning using multilayer hard mask structure

Meng¹,

He²,

Li³

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

View full text Add to dashboard Cite

In this work, we have investigated the evolution of line roughness from the photoresist (PR) to the polysilicon gate etch based on the composite SiO 2 ∕Si 3 N 4 ∕SiO 2 (ONO) multilayer hard mask structure using a capacitively coupled plasma etcher. A severe line roughness could be observed during gate patterning when the PR pattern was directly transferred into the ONO hard mask. Then, the formation mechanisms of line roughness were the results of the effects of decomposed oxygen radical generated from the SiO 2 mask because of ion bombardment and the rough surface morphology of poly-silicon that accelerates the etching of both the hard mask and the PR sidewalls by reflected ions. We found that a combination of an amorphous silicon (α-Si) capping layer and amorphous Si gate could effectively reduce the strong dependence of hard mask etch on PR and ions reflection effect from rough surface morphology of poly-silicon. Finally, our results have shown that the gate pattern with a fairly smooth line, without deformation, and with the gate length of 29 nm and the line width roughness of 3.4 nm can be achieved.

show abstract

Photo-induced Fragmentation of a Tin-oxo Cage Compound

Haitjema

Giuliani

et al. 2018

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

Tin-oxo cage materials are of interest for use as photoresists for EUV (Extreme-Ultraviolet) lithography (13.5 nm, 92 eV), owing to their large absorption cross section for EUV light. In this work we exposed an n-butyl tin-oxo cage dication in the gas phase to photons in the energy range 4-14 eV to explore its fundamental photoreactivity. At all energies above the onset of electronic absorption at ~5 eV (~250 nm) cleavage of tin-carbon bonds was observed. With photon energies >12 eV (<103 nm) photoionization can occur, leading to 3+ ions. Besides the higher charge promotion, butyl chain loss without electron ejection (leading to 2+ fragments) still occurs.

show abstract

Line-pattern collapse mitigation status for EUV at 32nm HP and below

Cited by 3 publications

References 0 publications

(Invited) Capillary Pattern Collapse: Prediction and Prevention from Past to Future

(Invited) Capillary Pattern Collapse: Prediction and Prevention from Past to Future

Transistor gate line roughness formation and reduction in sub-30-nm gate patterning using multilayer hard mask structure

Photo-induced Fragmentation of a Tin-oxo Cage Compound

Contact Info

Product

Resources

About